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參數(shù)資料
| 型號(hào)： | CY62138CV25LL-55BAI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 2M (256K x 8) Static RAM |
| 中文描述： | 256K X 8 STANDARD SRAM, 55 ns, PBGA36 |
| 封裝： | 7 X 7 MM, 1.20 MM HEIGHT, FBGA-36 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 234K |
| 代理商： | CY62138CV25LL-55BAI |
CY62138CV25/30/33 MoBL
CY62138CV MoBL
Document #: 38-05200 Rev. *D
Page 3 of 12
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Test Conditions
CY62138CV25-55
Min.
Typ.
[5]
2.0
CY62138CV25-70
Min.
Typ.
[5]
2.0
Unit
V
V
V
Max.
Max.
I
OH
=
–
0.1 mA
I
OL
= 0.1 mA
V
CC
= 2.2V
V
CC
= 2.2V
0.4
V
CC
+
0.3V
0.6
+1
+1
0.4
V
CC
+
0.3V
0.6
+1
+1
1.8
1.8
V
IL
I
IX
I
OZ
Input LOW Voltage
Input Leakage Current GND < V
I
< V
CC
Output Leakage
Current
V
CC
Operating Supply
Current
–
0.3
–
1
–
1
–
0.3
–
1
–
1
V
μ
A
μ
A
GND < V
O
< V
CC
, Output Disabled
I
CC
f = f
MAX
= 1/t
RC
f = 1 MHz
V
CC
= 2.7V
I
OUT
= 0 mA
CMOS Levels
7
15
3
5.5
1.5
12
3
mA
1.5
I
SB1
Automatic CE
Power-down Current
—
CMOS Inputs
CE
1
> V
CC
–
0.2V or CE
2
< 0.2V
V
IN
> V
CC
–
0.2V or V
IN
< 0.2V, f =
f
max
(Address and Data Only), f = 0
(OE, WE)
CE
1
> V
CC
–
0.2V or CE
2
< 0.2V
V
IN
> V
CC
0.2V or V
IN
< 0.2V, f = 0, V
CC
= 2.7V
2
10
2
10
μ
A
I
SB2
Automatic CE
Power-down Current
—
CMOS Inputs
Parameter
V
OH
V
OL
V
IH
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Test Conditions
CY62138CV30-55
Min.
Typ.
[5]
2.4
CY62138CV30-70
Min.
Typ.
[5]
2.4
Unit
V
V
V
Max.
Max.
I
OH
=
–
1.0 mA
I
OL
= 2.1 mA
V
CC
= 2.7V
V
CC
= 2.7V
0.4
V
CC
+
0.3V
0.8
+1
+1
0.4
V
CC
+
0.3V
0.8
+1
+1
2.2
2.2
V
IL
I
IX
I
OZ
Input LOW Voltage
Input Leakage Current GND < V
I
< V
CC
Output Leakage
Current
V
CC
Operating Supply
Current
–
0.3
–
1
–
1
–
0.3
–
1
–
1
V
μ
A
μ
A
GND < V
O
< V
CC
, Output Disabled
I
CC
f = f
MAX
= 1/t
RC
f = 1 MHz
V
CC
= 3.3V
I
OUT
= 0 mA
CMOS Levels
7
15
3
5.5
1.5
12
3
mA
1.5
I
SB1
Automatic CE
Power-down Current
—
CMOS Inputs
CE
1
> V
CC
–
0.2V or CE
2
< 0.2V
V
IN
> V
CC
–
0.2V or V
IN
< 0.2V, f =
f
max
(Address and Data Only), f = 0
(OE, WE)
CE
1
> V
CC
–
0.2V or CE
2
< 0.2V, V
IN
> V
CC
0.2V or V
IN
< 0.2V, f = 0,
V
CC
=3.3V
2
10
2
10
μ
A
I
SB2
Automatic CE
Power-down Current
—
CMOS Inputs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY62138CV25LL-55BVI | 2M (256K x 8) Static RAM |
| CY62138CV25LL-70BAI | 2M (256K x 8) Static RAM |
| CY62138CV25LL-70BVI | 2M (256K x 8) Static RAM |
| CY62138CV30 | 2M (256K x 8) Static RAM |
| CY62138CV30LL-55BAI | 2M (256K x 8) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62138CV25LL-55BVI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2M (256K x 8) Static RAM |
| CY62138CV25LL-70BAI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2M (256K x 8) Static RAM |
| CY62138CV25LL-70BVI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2M (256K x 8) Static RAM |
| CY62138CV30 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2M (256K x 8) Static RAM |
| CY62138CV30LL-55BAI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2M (256K x 8) Static RAM |
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