參數(shù)資料
型號： CY62128BNLL-70SXA
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 1-Mbit (128K x 8) Static RAM
中文描述： 128K X 8 STANDARD SRAM, 70 ns, PDSO32
封裝： 0.450 INCH, LEAD FREE, SOIC-32
文件頁數(shù)： 3/12頁
文件大?。?/td> 589K
代理商： CY62128BNLL-70SXA
CY62128BN
MoBL
Document #: 001-06498 Rev. *A
Page 3 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................–55
°
C to +125
°
C
Supply Voltage on V
CC
to Relative GND
[3]
....–0.5V to +7.0V
DC Voltage Applied to Outputs
in High-Z State
[3]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[3]
.................................–0.5V to V
CC
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage...........................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.....................................................> 200 mA
Operating Range
Range
Ambient
Temperature (T
A
)
[4]
0
°
C to +70
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +125
°
C
V
CC
Commercial
Industrial
Automotive-A
Automotive-E
5V
±
10%
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
Description
Output HIGH
Voltage
Output LOW Voltage V
CC
= Min., I
OL
= 2.1 mA
Input HIGH Voltage
Test Conditions
-55
Typ.
[2]
-70
Typ.
[2]
Unit
V
Min.
2.4
Max.
Min.
2.4
Max.
V
CC
= Min., I
OH
= –1.0 mA
V
OL
V
IH
0.4
V
CC
+ 0.3
0.8
+1
0.4
V
CC
+ 0.3
0.8
+1
V
V
2.2
2.2
V
IL
I
IX
Input LOW Voltage
[3]
Input Leakage
Current
–0.3
–1
–0.3
–1
V
μ
A
GND
≤
V
I
≤
V
CC
Commercial/
Industrial
Automotive-A
Automotive-E
Commercial/
Industrial
Automotive-A
Automotive-E
Commercial/
Industrial
Automotive-A
Automotive-E
Commercial/
Industrial
Automotive-A
Automotive-E
Commercial/
Industrial
Automotive-A
Automotive-E
–1
–10
–1
+1
+10
+1
μ
A
μ
A
μ
A
I
OZ
Output Leakage
Current
GND
≤
V
I
≤
V
CC
,
Output Disabled
–1
+1
–1
–10
+1
+10
15
μ
A
μ
A
mA
I
CC
V
CC
Operating
Supply Current
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
7.5
20
6
6
6
15
25
1
mA
mA
mA
I
SB1
Automatic CE
Power-down Current
—TTL Inputs
Max. V
CC
, CE
1
≥
V
IH
or CE
2
< V
IL
,
V
IN
≥
V
IH
or
V
IN
≤
V
IL
, f = f
MAX
0.1
2
0.1
0.1
0.1
2.5
1
2
mA
mA
μ
A
I
SB2
Automatic CE
Power-down Current
—CMOS Inputs
Max. V
CC
,
CE
1
≥
V
CC
– 0.3V,
or CE
2
≤
0.3V,
V
IN
≥
V
CC
– 0.3V,
or V
IN
≤
0.3V, f = 0
2.5
15
15
2.5
2.5
15
25
μ
A
μ
A
Notes:
3. V
IL
(min.) = –2.0V for pulse durations of less than 20 ns.
4. T
A
is the “Instant On” case temperature.
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CY62128BNLL-70SXAT 功能描述:靜態(tài)隨機(jī)存取存儲器 SLO 5.0V SUPER LO PWR 128K X 8 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62128BNLL-70SXC 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY62128BNLL-70SXCT 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY62128BNLL-70SXE 功能描述:靜態(tài)隨機(jī)存取存儲器 SLO 5.0V SUPER LO PWR 128K X 8 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62128BNLL-70SXET 功能描述:靜態(tài)隨機(jī)存取存儲器 SLO 5.0V SUPER LO PWR 128K X 8 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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