參數(shù)資料
型號: CY62126V
廠商: Cypress Semiconductor Corp.
英文描述: 64K x 16 Static RAM(64K x 16 靜態(tài)RAM)
中文描述: 64K的× 16靜態(tài)RAM(64K的× 16靜態(tài)RAM)的
文件頁數(shù): 5/9頁
文件大?。?/td> 150K
代理商: CY62126V
CY62126V
PRELIMINARY
5
Data Retention Characteristics
(Over the Operating Range for
L
and
LL
version only)
Parameter
V
DR
I
CCDR
Description
Conditions
[9]
Min.
2.0
Typ
Max.
3.6
50
15
30
Unit
V
μ
A
μ
A
μ
A
ns
ns
V
CC
for Data Retention
Data Retention Current
L
LL
LL
V
CC
=V
DR
=3.0V,
CE
V
CC
0.3V,
V
IN
V
CC
0.3V or,
V
IN
0.3V
0.5
0.5
0.5
Com
l
Ind
l
t
CDR[4]
t
R
Chip Deselect to Data Retention Time
Operation Recovery Time
0
t
RC
Data Retention Waveform
Switching Waveforms
Read Cycle No.1
[10,11]
Read Cycle No. 2 (OE Controlled)
[11,12,13]
Notes:
9.
10. No input may exceed V
IL
.
11. WE is HIGH for read cycle.
12. Address valid prior to or coincident with CE transition LOW.
13. Data I/O is high impedance if OE = V
IH
or BHE and BLE = V
IH
.
CC
+ 0.3V.
62126V
5
3.0V
3.0V
t
CDR
V
DR
> 2V
DATA RETENTION MODE
t
R
CE
V
CC
PREVIOUS DATA VALID
DATA VALID
t
RC
t
AA
t
OHA
62126V-6
ADDRESS
DATA OUT
62126V-7
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
HZCE
t
PD
OE
DATA OUT
SUPPLY
CURRENT
BHE, BLE
ICC
ISB
HIGH
IMPEDANCE
ADDRESS
t
LZBE
t
DBE
t
HZBE
CE
V
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