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參數(shù)資料
| 型號： | CY62126V |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 64K x 16 Static RAM(64K x 16 靜態(tài)RAM) |
| 中文描述： | 64K的× 16靜態(tài)RAM（64K的× 16靜態(tài)RAM）的 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 150K |
| 代理商： | CY62126V |
PRELIMINARY
64K x 16 Static RAM
CY62126V
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
February 13, 1998
408-943-2600
Features
2.7V–3.6V operation
CMOS for optimum speed/power
Low active power (70 ns)
—198 mW (max.) (55 mA)
Low standby power (70 ns, LL version)
—54
μ
W (max.) (15
μ
A)
Automatic power-down when deselected
Independent control of Upper and Lower Bytes
Available in 44-pin TSOP II (forward)
Functional Description
The CY62126V is a high-performance CMOS static RAM or-
ganized as 65,536 words by 16 bits. This device has an auto-
matic power-down feature that significantly reduces power
consumption by 99% when deselected. The device enters
power-down mode when CE is HIGH.
Writing to the device is accomplished by taking chip enable
(CE) and write enable (WE) inputs LOW. If byte low enable
(BLE) is LOW, then data from I/O pins (I/O
1
through I/O
8
), is
written into the location specified on the address pins (A
0
through A
15
). If byte high enable (BHE) is LOW, then data from
I/O pins (I/O
9
through I/O
16
) is written into the location speci-
fied on the address pins (A
0
through A
15
).
Reading from the device is accomplished by taking chip en-
able (CE) and output enable (OE) LOW while forcing the write
enable (WE) HIGH. If byte low enable (BLE) is LOW, then data
from the memory location specified by the address pins will
appear on I/O
1
to I/O
8
. If byte high enable (BHE) is LOW, then
data from memory will appear on I/O
9
to I/O
16
. See the truth
table at the back of this datasheet for a complete description
of read and write modes.
The input/output pins (I/O
1
through I/O
16
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY62126V is available in standard 44-pin TSOP Type II
(forward pinout) and mini-BGA packages.
Logic Block Diagram
Pin Configurations
64K x 16
RAM Array
1024 X 1024
I/O
1
– I/O
8
R
A
10
A
9
A
7
A
6
A
3
A
2
A
1
A
0
COLUMN DECODER
A
5
A
8
A
1
A
1
A
1
S
DATA IN DRIVERS
OE
BLE
I/O
9
– I/O
16
CE
BHE
A
4
WE
A
15
A
14
A
13
A
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
31
30
32
36
35
34
33
37
40
39
38
Top View
TSOP II (Forward)
41
44
43
42
16
17
29
28
V
CC
V
SS
I/O
5
I/O
6
A
4
A
3
A
2
A
1
A
0
OE
BHE
BLE
V
SS
V
CC
I/O
12
I/O
11
I/O
10
I/O
9
A
5
A
6
A
7
I/O
16
I/O
15
I/O
14
I/O
13
CE
I/O
1
I/O
2
I/O
3
I/O
4
NC
A
8
A
9
A
10
A
11
18
19
20
21
27
26
25
24
22
23
NC
I/O
7
I/O
8
A
11
A
12
62126V–1
62126V–2
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|---|---|
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY62127BV | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:64K x 16 Static RAM |
| CY62127BV_02 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1M (64K x 16) Static RAM |
| CY62127BVLL-55BAI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:64K x 16 Static RAM |
| CY62127BVLL-55ZI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:64K x 16 Static RAM |
| CY62127BVLL-70BAI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:64K x 16 Static RAM |
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