參數(shù)資料
型號(hào): CY28508OXC
廠商: Silicon Laboratories Inc
文件頁(yè)數(shù): 11/13頁(yè)
文件大?。?/td> 0K
描述: IC CLOCK SSCG 3DIFF PAIR 28SSOP
標(biāo)準(zhǔn)包裝: 47
類型: *
PLL:
輸入: 晶體
輸出: 時(shí)鐘
電路數(shù): 1
比率 - 輸入:輸出: 1:4
差分 - 輸入:輸出: 無(wú)/是
頻率 - 最大: 333.3MHz
除法器/乘法器: 是/無(wú)
電源電壓: 2.375 V ~ 3.465 V
工作溫度: 0°C ~ 70°C
安裝類型: *
封裝/外殼: *
供應(yīng)商設(shè)備封裝: *
包裝: *
CY28508
........................ Document #: 38-07534 Rev. *F Page 7 of 13
This circuitry is designed to present simultaneous M&N values
to the VCO when writing to the I2C lines. If not for this delay in
writing the N register value, the VCO would use a new N value
and an old M value and would go to an indeterminate
frequency until the next I2C byte was written.
Crystal Recommendations
The CY28508 requires a Parallel Resonance Crystal.
Substituting a series resonance crystal will cause the
CY28508 to operate at the wrong frequency and violate the
ppm specification. For most applications there is a 300-ppm
frequency shift between series and parallel crystals due to
incorrect loading.
Crystal Loading
Crystal loading plays a critical role in achieving low ppm perfor-
mance. To realize low ppm performance, the total capacitance
the crystal will see must be considered to calculate the appro-
priate capacitive loading (CL). Figure 2 shows a typical crystal
configuration using the two trim capacitors. An important clari-
fication for the following discussion is that the trim capacitors
are in series with the crystal not parallel. It’s a common
misconception that load capacitors are in parallel with the
crystal and should be approximately equal to the load capaci-
tance of the crystal.
N Register
M Register
Byte N1 W rite
FSEL
Latch
SMBus
DAF-M1
SMBus
DAF-N1
Byte M1 W rite
Latch
SMBus
DAF-M0
SMBus
DAF-N0
Byte M0 W rite
Byte N0 W rite
Figure 1. Dial-a-Frequency Register Switching and Synchronizer Circuitry
Figure 2. Crystal Capacitive Clarification
Table 5. Crystal Recommendations
Frequency
(Fund)
Cut
Loading
Load Cap
Drive
(max.)
Shunt Cap
(max.)
Motional
(max.)
Tolerance
(max.)
Stability
(max.)
Aging
(max.)
14.31818 MHz
AT
Parallel
20 pF
0.1 mW
5 pF
0.016 pF
50 ppm
5 ppm
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