參數(shù)資料
型號(hào): CY22E016L-SZ35XIT
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 16-Kbit (2K x 8) nvSRAM
中文描述: 2K X 8 NON-VOLATILE SRAM, 35 ns, PDSO28
封裝: 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-28
文件頁(yè)數(shù): 5/14頁(yè)
文件大?。?/td> 748K
代理商: CY22E016L-SZ35XIT
PRELIMINARY
CY22E016L
Document #: 001-06727 Rev. *C
Page 5 of 14
Preventing STOREs
The STORE
function can be disabled on the fly by holding HSB
high with a driver capable of sourcing 30 mA at a V
OH
of at
least 2.2V, as it will have to overpower the internal pull-down
device that drives HSB low for 20 ns at the onset of a STORE.
When the CY22E016L is connected for AutoStore operation
(system V
CC
connected to V
CC
and a 68
μ
F capacitor on V
CAP
)
and V
CC
crosses V
SWITCH
on the way down, the CY22E016L
will attempt to pull HSB low; if HSB doesn’t actually get below
V
IL
, the part will stop trying to pull HSB low and abort the
STORE
attempt.
Table 1. Hardware Mode Selection
CE
WE
HSB
A10–A0
Mode
I/O
Power
H
X
H
X
Not Selected
Output High-Z
Standby
L
H
H
X
Read SRAM
Output Data
Active
L
L
H
X
Write SRAM
Input Data
Active
X
X
L
X
Non-Volatile
STORE
Output High-Z
I
CC2
Figure 4. Current vs. Cycle Time (READ)
Figure 5. Current vs. Cycle Time (WRITE)
[+] Feedback
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