參數(shù)資料
型號(hào): CY14B104L-ZSP45XIT
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 4-Mbit (512K x 8/256K x 16) nvSRAM
中文描述: 512K X 8 NON-VOLATILE SRAM, 45 ns, PDSO54
封裝: ROHS COMPLIANT, TSOP2-54
文件頁(yè)數(shù): 9/21頁(yè)
文件大?。?/td> 371K
代理商: CY14B104L-ZSP45XIT
CY14B104L/CY14B104N
PRELIMINARY
Document #: 001-07102 Rev. *E
Page 9 of 21
Thermal Resistance
Parameter
Θ
JA
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test Conditions
48-FBGA 44-TSOP II 54-TSOP II
TBD
TBD
Unit
°
C/W
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, in accordance with EIA/JESD51.
TBD
Θ
JC
TBD
TBD
TBD
°
C/W
AC Test Loads
3.0V
OUTPUT
5 pF
R1 577
R2
789
3.0V
OUTPUT
30 pF
R1 577
R2
789
for tri-state specs
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