- 您現在的位置：買賣IC網 > PDF目錄378997 > CY14B104L-ZSP45XIT (CYPRESS SEMICONDUCTOR CORP) 4-Mbit (512K x 8/256K x 16) nvSRAM PDF資料下載
參數資料
| 型號： | CY14B104L-ZSP45XIT |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| 中文描述： | 512K X 8 NON-VOLATILE SRAM, 45 ns, PDSO54 |
| 封裝： | ROHS COMPLIANT, TSOP2-54 |
| 文件頁數： | 8/21頁 |
| 文件大?。?/td> | 371K |
| 代理商： | CY14B104L-ZSP45XIT |
CY14B104L/CY14B104N
PRELIMINARY
Document #: 001-07102 Rev. *E
Page 8 of 21
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device.
Storage Temperature .................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................–55
°
C to +150
°
C
Supply Voltage on V
CC
Relative to GND ......... –0.5V to 4.1V
Voltage Applied to Outputs
in High-Z State.......................................–0.5V to V
CC
+ 0.5V
Input Voltage............................................ –0.5V to Vcc+0.5V
Transient Voltage (<20 ns) on
Any Pin to Ground Potential ..................–2.0V to V
CC
+ 2.0V
Package Power Dissipation
Capability (T
A
= 25°C) ................................................... 1.0W
Surface Mount Pb Soldering
Temperature (3 Seconds).......................................... +260
°
C
Output Short Circuit Current
[5]
.................................... 15 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ................................................... > 200 mA
Operating Range
Range
Ambient Temperature
0
°
C to +70
°
C
–40
°
C to +85
°
C
V
CC
Commercial
Industrial
2.7V to 3.6V
2.7V to 3.6V
Above table contains advanced information.
DC Electrical Characteristics
Over the Operating Range (V
CC
= 2.7V to 3.6V)
Parameter
Description
I
CC1
Average V
CC
Current
Test Conditions
Min
Max
70
65
50
75
70
52
3
Unit
mA
mA
mA
mA
mA
mA
mA
t
AVAV
= 15 ns
t
AVAV
= 25 ns
t
AVAV
= 45 ns
Dependent on output loading and cycle
rate.Values obtained without output loads.
I
OUT
= 0 mA
Commercial
Industrial
I
CC2
Average V
CC
Current
during STORE
Average V
CC
Current at
t
AVAV
= 200 ns, 3V,
25°C typical
Average V
CAP
Current
during AutoStore Cycle
V
CC
Standby Current
All Inputs Don’t Care, V
CC
= Max
Average current for duration t
STORE
WE > (V
CC
– 0.2). All other I/P cycling.
Dependent on output loading and cycle rate. Values obtained
without output loads.
All Inputs Don’t Care, V
CC
= Max
Average current for duration t
STORE
CE > (V
CC
– 0.2). All others V
IN
< 0.2V or > (V
CC
– 0.2V).
Standby current level after nonvolatile cycle is complete.
Inputs are static. f = 0 MHz.
Input Leakage Current V
CC
= Max, V
SS
< V
IN
< V
CC
Off-State Output
Leakage Current
Input HIGH Voltage
Input LOW Voltage
Output HIGH Voltage
I
OUT
= –2 mA
Output LOW Voltage
I
OUT
= 4 mA
Storage Capacitor
Between V
CAP
pin and V
SS
, 5V Rated
I
CC3
25
mA
I
CC4
3
mA
I
SB
1
mA
I
IX
I
OZ
–1
–1
+1
+1
μ
A
μ
A
V
CC
= Max, V
SS
< V
IN
< V
CC
, CE or OE > V
IH
V
IH
V
IL
V
OH
V
OL
V
CAP
2.0
V
CC
+ 0.5
0.8
V
V
V
V
μ
F
V
CC
– 0.5
2.4
0.4
57
35
Capacitance
[7]
Parameter
Description
Test Conditions
Max
7
7
Unit
pF
pF
C
IN
C
OUT
Input Capacitance
Output Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 0 to 3.0V
Notes
5. Outputs shorted for no more than one second. No more than one output shorted at a time.
6. Typical conditions for the active current shown on the front page of the data sheet are average values at 25°C (room temperature), and V
CC
= 3V. Not 100% tested.
7. These parameters are guaranteed but not tested.
[6]
[+] Feedback
相關PDF資料 |
PDF描述 |
|---|---|
| CY14B104N | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104N-BA15XCT | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104N-BA15XI | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104N-BA15XIT | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104N-BA25XCT | 4-Mbit (512K x 8/256K x 16) nvSRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CY14B104M | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) nvSRAM with Real Time Clock |
| CY14B104MA | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock |
| CY14B104MA-ZS20XCT | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock |
| CY14B104MA-ZS20XI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock |
| CY14B104MA-ZS20XIT | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock |
發(fā)布緊急采購，3分鐘左右您將得到回復。