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參數(shù)資料
| 型號(hào)： | CY14B104L-ZSP25XIT |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| 中文描述： | 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO54 |
| 封裝： | ROHS COMPLIANT, TSOP2-54 |
| 文件頁數(shù)： | 13/21頁 |
| 文件大?。?/td> | 371K |
| 代理商： | CY14B104L-ZSP25XIT |
CY14B104L/CY14B104N
PRELIMINARY
Document #: 001-07102 Rev. *E
Page 13 of 21
Figure 5. SRAM Write Cycle #2: CE Controlled
[21]
Figure 6. AutoStore/Power Up RECALL
Switching Waveforms
(continued)
t
WC
ADDRESS
t
SA
t
SCE
t
HA
t
AW
t
PWE
t
SD
t
HD
CE
WE
DATA IN
DATA OUT
HIGH IMPEDANCE
DATA VALID
BHE , BLE
t
BW
V
CC
V
SWITCH
t
STORE
t
STORE
t
HRECALL
t
HRECALL
AutoStore
POWER-UP RECALL
Read & Write Inhibited
STORE occurs only
if a SRAM write
has happened
No STORE occurs
without atleast one
SRAM write
t
VCCRISE
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
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| CY14B104L-ZSP45XCT | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZSP45XI | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZSP45XIT | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104N | 4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104N-BA15XCT | 4-Mbit (512K x 8/256K x 16) nvSRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY14B104L-ZSP45XCT | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZSP45XI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104L-ZSP45XIT | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (512K x 8/256K x 16) nvSRAM |
| CY14B104M | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) nvSRAM with Real Time Clock |
| CY14B104MA | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock |
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