參數(shù)資料
型號: CXK5V8257BTM-10LL
廠商: Sony Corporation
英文描述: 32768-word X 8-bit High Speed CMOS Static RAM
中文描述: 32768字× 8位高速CMOS靜態(tài)RAM
文件頁數(shù): 3/9頁
文件大?。?/td> 204K
代理商: CXK5V8257BTM-10LL
– 3 –
CXK5V8257BTM/BYM/BM
Input pulse high level
Input pulse low level
Input rise time
Input fall time
Input and output reference level
-70LL
-10LL
V
IH
= 2.0V
V
IL
= 0.8V
t
r = 5ns
t
f = 5ns
1.4V
C
L
2
= 30pF, 1TTL
C
L
2
= 100pF, 1TTL
Item
Conditions
TTL
C
L
Output load
conditions
AC Characteristics
AC test conditions
(V
CC
= 3.3V ± 0.3V, Ta = 0 to +70°C)
2
C
L
includes scope and jig capacitances.
I/O capacitance
(Ta = 25°C, f = 1MHz)
Input capacitance
I/O capacitance
Item
Symbol Test condition
Min.
Typ.
Max.
Unit
C
IN
C
I/O
V
IN
= 0V
V
I/O
= 0V
8
10
pF
pF
Note)
This parameter is sampled and is not 100% tested.
Electrical Characteristics
DC characteristics
(V
CC
= 3.3V ± 0.3V, GND = 0V, Ta = 0 to +70°C)
Item
Symbol
I
LI
Test Conditions
Min.
Typ.
1
Max.
Unit
μA
Input leakage current
Output leakage
current
Operating power
supply current
Average operating
current
Standby current
Output high
voltage
Output low
voltage
1
V
CC
= 3.3V, Ta = 25°C
I
LO
I
CC1
I
CC2
I
SB1
I
SB2
V
OH
V
OL
VIN = GND to VCC
CE = V
IH
,
OE = V
IH
or WE = V
IL
,
V
I/O
= GND to V
CC
CE = V
IL
,
V
IN
= V
IH
or V
IL
,
I
OUT
= 0mA
Min. cycle,
Duty = 100%, I
OUT
= 0mA
CE
V
CC
– 0.2V
CE = V
IH
I
OH
= –2mA
I
OL
= 2.0mA
–0.5
–0.5
2.4
0.5
0.5
2
40
35
3.5
0.7
0.35
0.7
0.4
0.9
21
18
0.12
0.06
μA
mA
mA
μA
mA
V
V
70LL
10LL
0 to +70°C
0 to +40°C
+25°C
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CXK5V8257BTM-70LL 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32768-word X 8-bit High Speed CMOS Static RAM
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