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參數(shù)資料
| 型號(hào)： | CXK5B16120J-12 |
| 廠商： | Sony Corporation |
| 英文描述： | 65536-word X 16-bit High Speed Bi-CMOS Static RAM |
| 中文描述： | 65536字× 16位高速雙CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 236K |
| 代理商： | CXK5B16120J-12 |
– 6 –
CXK5B16120J/TM
Write cycle (1) : WE control
Address
t
AS
t
WP
t
DH
t
WHZ
t
DW
CE
WE
Data out
High impedance
Data
valid
t
OW
Data in
t
A
W
t
CW
t
WC
t
WR
LB, UB
t
LBW
, t
UBW
Write cycle (2) : CE control
Address
t
AS
t
D
W
CE
WE
Data out
High
impedance
Data valid
Data in
t
A
W
t
WC
t
WR
t
D
H
t
WHZ
t
LZ
t
WP
t
CW
LB, UB
t
LBW
, t
UBW
Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK5B81020TM-12 | 128 x 64 pixel format, LED Backlight available |
| CXK5B81020J | 131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM |
| CXK5B81020J-12 | 131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM |
| CXK5B81020TM | 131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM |
| CXK5B81020JM-12 | 131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK5B16120TM-12 | 制造商:SONY 制造商全稱(chēng):Sony Corporation 功能描述:65536-word X 16-bit High Speed Bi-CMOS Static RAM |
| CXK5B18120J-12 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x18 SRAM |
| CXK5B18120TM- | 制造商:SONY 制造商全稱(chēng):Sony Corporation 功能描述:65536-word x 18-bit High Speed Bi-CMOS Static RAM |
| CXK5B18120TM-12 | 制造商:SONY 制造商全稱(chēng):Sony Corporation 功能描述:65536-word x 18-bit High Speed Bi-CMOS Static RAM |
| CXK5B41020TM- | 制造商:SONY 制造商全稱(chēng):Sony Corporation 功能描述:262144-word x 4-bit High Speed Bi-CMOS Static RAM |
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