參數(shù)資料
型號: CXK5B16120J-12
廠商: Sony Corporation
英文描述: 65536-word X 16-bit High Speed Bi-CMOS Static RAM
中文描述: 65536字× 16位高速雙CMOS靜態(tài)RAM
文件頁數(shù): 3/10頁
文件大?。?/td> 236K
代理商: CXK5B16120J-12
– 3 –
CXK5B16120J/TM
Electrical Characteristics
DC Characteristics
(Vcc = 3.3V±0.3V, GND = 0V, Ta = 0 to +70°C)
Item
Symbol
Conditions
V
IN
= GND to Vcc
CE = V
IH
or OE = V
IH
or WE = V
IL
or
UB = V
IH
or LB = V
IH
V
I/O
= GND to Vcc
Min. Cycle
Duty =100%
I
OUT
= 0mA, CE = V
IL
, V
IN
= V
IH
or V
IL
CE
Vcc – 0.2V
V
IN
Vcc – 0.2V or V
IN
0.2V
Min. Cycle
Duty =100%
CE = V
IH
, V
IN
= V
IH
or V
IL
I
OH
= –2.0mA
I
OL
= 2.0mA
–10
–10
2.4
+10
+10
270
10
100
0.4
μA
μA
mA
mA
mA
V
V
Input leakage current
Output leakage current
Average operating
current
Standby current
Output high voltage
Output low voltage
I
LI
I
LO
I
CC
I
SB1
I
SB2
V
OH
V
OL
Min.
Typ.
Max.
Unit
*
Vcc = 3.3V, Ta = 25°C
I/O Capacitance
(Ta = 25°C, f = 1MHz)
Item
Input capacitance
I/O capacitance
C
IN
C
I/O
V
IN
= 0V
V
I/O
= 0V
5
7
pF
pF
Symbol
Conditions
Min.
Typ.
Max.
Unit
AC Characteristics
AC test condition
(Vcc = 3.3V±0.3V, Ta = 0 to +70°C)
Item
Input pulse high level
Input pulse low level
Input rise time
Input fall time
Input and output reference level
Output load conditions
V
IH
= 3.0V
V
IL
= 0.0V
t
r = 2ns
t
f = 2ns
1.4V
Fig. 1
Condition
I/O
Zo=50
R
L
=50
V
L
=1.4V
I/O
3.3V
1179
868
5pF*
2
Output load (1)
Output load (2)*
1
*1.
For t
LZ
, t
OLZ
, t
LBLZ
, t
UBLZ
, t
HZ
, t
OHZ
, t
LBHZ
, t
UBHZ
, t
OW
, t
WHZ
*2.
Including scope and jig capacitances.
Fig. 1
Note)
This parameter is sampled and is not 100% tested.
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