- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378988 > CXK5B16120J-12 (Sony Corporation) 65536-word X 16-bit High Speed Bi-CMOS Static RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | CXK5B16120J-12 |
| 廠商： | Sony Corporation |
| 英文描述： | 65536-word X 16-bit High Speed Bi-CMOS Static RAM |
| 中文描述： | 65536字× 16位高速雙CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 236K |
| 代理商： | CXK5B16120J-12 |
– 4 –
CXK5B16120J/TM
Read cycle
Item
Read cycle time
Address access time
Chip enable access time
Output enable to output valid
Byte select to output valid
Output data hold time
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Byte select to output in low Z (LB, UB)
Chip disable to output in high Z (CE)
Output disable to output in high Z (OE)
Byte select to output in high Z (LB, UB)
12
—
—
—
—
3
3
0
0
0
0
0
—
12
12
6
6
—
—
—
—
6
6
6
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RC
t
AA
t
CO
t
OE
t
LB
C
t
UB
t
OH
t
LZ
t
OLZ
t
LBLZ
,
t
UBLZ
t
HZ
t
OHZ
t
LBHZ
,
t
UBHZ
Symbol
-12
Min.
Max.
Unit
Write cycle
Item
Write cycle time
Address valid to end of write
Chip enable to end of write
Byte select to end of write
Data valid to end to write
Data hold from end of write
Write pulse width
Address set up time
Write recovery time
Output active from end of write
Write to output in high Z
12
10
10
10
8
0
10
0
0
4
0
—
—
—
—
—
—
—
—
—
—
6
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
WC
t
AW
t
CW
t
LBW
,
t
UBW
t
DW
t
DH
t
WP
t
AS
t
WR
t
OW
*
t
WHZ
*
Symbol
-12
Min.
Max.
Unit
Transition is measured ±200mV from steady voltage with specified loading in Fig. 1-(2).
This parameter is sampled and is not 100% tested.
Transition is measured ±200mV from steady voltage with specified loading in Fig. 1-(2).
This parameter is sampled and is not 100% tested.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK5B81020TM-12 | 128 x 64 pixel format, LED Backlight available |
| CXK5B81020J | 131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM |
| CXK5B81020J-12 | 131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM |
| CXK5B81020TM | 131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM |
| CXK5B81020JM-12 | 131072-word ⅴ 8-bit High Speed Bi-CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK5B16120TM-12 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word X 16-bit High Speed Bi-CMOS Static RAM |
| CXK5B18120J-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 SRAM |
| CXK5B18120TM- | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word x 18-bit High Speed Bi-CMOS Static RAM |
| CXK5B18120TM-12 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word x 18-bit High Speed Bi-CMOS Static RAM |
| CXK5B41020TM- | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:262144-word x 4-bit High Speed Bi-CMOS Static RAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。