參數(shù)資料
型號(hào)： CSR2930800BA
廠商： Electronic Theatre Controls, Inc.
英文描述： FLASH MEMORY CMOS 8M (1M x 8/512K x 16) BIT
中文描述： 閃存的CMOS 800萬(wàn)（100萬(wàn)x 8/512K × 16）位
文件頁(yè)數(shù)： 1/50頁(yè)
文件大?。?/td> 475K
代理商： CSR2930800BA
Rev. 1.1
FLASH MEMORY
CMOS
8M (1M
×
8/512K
×
16) BIT
CSR2930800BA
-90
I
DESCRIPTION
The CSR2930800BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words
of 16 bits each. TheCSR2930800BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA packages.
These devices are designed to be programmed in-system with the standard system 3.0 V V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not required for write or erase operations. The devices can also be reprogrammed in standard
EPROM programmers.
The standard CSR2930800BA offer access times 90 ns, allowing operation of high-speed microprocessors without
wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and
output enable (OE) controls.
The CSR2930800BA are pin and command set compatible with JEDEC standard E
2
PROMs. Commands are
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the devices is similar
to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The CSR2930800BA are programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the devices automatically time the erase pulse widths and
verify proper cell margin.
(Continued)
I
PRODUCT LINE UP
(Continued)
Part No.
CSR2930800BA
Ordering Part No.
V
CC
= 3.0 V
+0.6 V
–0.3 V
-90
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
90
90
35
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