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參數(shù)資料
| 型號(hào)： | CPH6530 |
| 廠(chǎng)商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | PNP / NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose |
| 中文描述： | 進(jìn)步黨/瑞展硅晶體管低頻通用 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 57K |
| 代理商： | CPH6530 |
CPH6530
No.8709-1/5
Applications
Muting circuit, relay drivers, lamp drivers, motor drivers.
Features
Composite type with a PNP / NPN transistor contained in one package, facilitating high-density mounting.
Ultrasmall package permitting applied sets to be small and slim.
Specifications
( ) : PNP
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
Unit
V
V
V
A
A
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
(--15)60
(--12)50
(--)5
(--1)0.5
(--2)1
Mounted on a ceramic board (600mm
2
0.8m) 1unit
0.6
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
(--)100
(--)100
(700)800
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Marking : EQ
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=(--12)40V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)10mA
VCE=(--2)10V, IC=(--)50mA
VCB=(--)10V, f=1MHz
IC=(--400)100mA, IB=(--20)10mA
IC=(--400)100mA, IB=(--20)10mA
IC=(--)10
μ
A, IE=0A
IC=(--)1mA, RBE=
∞
IE=(--)10
μ
A, IC=0A
nA
nA
300
(450)500
(6)2.8
(--120)50 (--240)100
(--)0.9
MHz
pF
mV
V
V
V
V
(--)1.2
(--15)60
(--12)50
(--)5
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8709
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D2805EA MS IM TB-00001960
CPH6530
PNP / NPN Epitaxial Planar Silicon Transistor
Low-Frequency General-Purpose
Applications
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| CPH6531-TL-E | 功能描述:兩極晶體管 - BJT BIP PNP+PNP 1A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| CPH6532-TL-E | 功能描述:TRANS NPN BIPO 1A 50V DUAL CPH6 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類(lèi)型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類(lèi)型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱(chēng):SP000747402 |
| CPH6538 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications |
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