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參數(shù)資料
| 型號： | CPH6531 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications |
| 中文描述： | 進步黨硅外延平面晶體管直流/直流轉(zhuǎn)換器應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 57K |
| 代理商： | CPH6531 |
CPH6531
No. A0521-1/4
Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Composite type with two PNP transistors contained in one package facilitating high-density mounting.
The two chips contained are equivalent to the CPH3116.
Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
PT
Tj
Tstg
Conditions
Ratings
Unit
V
V
V
V
A
A
mA
W
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
--50
--50
--50
--5
--1.0
--2
--200
0.9
1.1
150
Mounted on a ceramic board (600mm
2
0.8m) 1unit
Mounted on a ceramic board (600mm
2
0.8m)
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
--0.1
--0.1
560
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Marking : ES
ICBO
IEBO
hFE
fT
Cob
VCB=--40V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--100mA
VCE=--10V, IC=--300mA
VCB=--10V, f=1MHz
μ
A
μ
A
200
420
MHz
pF
9
Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0521
SANYO Semiconductors
DATA SHEET
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
11007EA TI IM TC-00000426
CPH6531
PNP Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CPH6531-TL-E | 功能描述:兩極晶體管 - BJT BIP PNP+PNP 1A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CPH6532 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications |
| CPH6532-TL-E | 功能描述:TRANS NPN BIPO 1A 50V DUAL CPH6 RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標準包裝:10,000 系列:- 晶體管類型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000747402 |
| CPH6538 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications |
| CPH6538-TL-H | 功能描述:兩極晶體管 - BJT NPN+NPN 0.7A 30V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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