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參數(shù)資料
| 型號： | CPH6619 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device |
| 中文描述： | N溝道和P溝道MOSFET的硅通用開關(guān)設(shè)備 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 63K |
| 代理商： | CPH6619 |
CPH6619
No. A0473-1/7
Features
Composite type of a low on-resistance ultra-high switching P-channel MOSFET and a small signal N-channel MOSFET
for driving P-channel MOSFET enables high-density mounting.
Excellent ON-resistance characterristic.
Best suited for load switches.
N-channel 1.5V drive, P-channel 1.8V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
N-channel
P-channel
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
30
--12
±
8
--2
--8
±
10
0.4
1.6
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (900mm
2
0.8mm) 1unit
0.8
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=
±
8V, VDS=0V
VDS=10V, ID=100
μ
A
VDS=10V, ID=80mA
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
30
V
μ
A
μ
A
V
S
pF
pF
pF
1
±
10
1.3
0.4
0.13
0.22
2.9
3.7
6.4
3.7
5.2
12.8
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : WF
7
5.9
2.3
Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0473
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
72006PE MS IM TC-00000048
SANYO Semiconductors
DATA SHEET
CPH6619
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
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| CPH6635-TL-H | 功能描述:MOSFET N/P-CH 30V/20V CPH6 制造商:on semiconductor 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 FET 類型:N 和 P 溝道 FET 功能:邏輯電平門 漏源極電壓（Vdss）:30V，20V 電流 - 連續(xù)漏極（Id）（25°C 時）:400mA，1.5A 不同?Id，Vgs 時的?Rds On（最大值）:3.7 歐姆 @ 80mA，4V 不同 Id 時的 Vgs（th）（最大值）:- 不同 Vgs 時的柵極電荷（Qg）:1.58nC @ 10V 不同 Vds 時的輸入電容（Ciss）:7pF @ 10V 功率 - 最大值:800mW 工作溫度:150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:SOT-23-6 細(xì)型，TSOT-23-6 供應(yīng)商器件封裝:6-CPH 標(biāo)準(zhǔn)包裝:3,000 |
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