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參數(shù)資料
| 型號(hào)： | CPH6332 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | P-Channel Silicon MOSFET General-Purpose Switching Device |
| 中文描述： | P溝道MOSFET的硅通用開關(guān)設(shè)備 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 58K |
| 代理商： | CPH6332 |
CPH6332
No. A0726-1/4
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0726
CPH6332
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
SANYO Semiconductors
DATA SHEET
Features
Low ON-resistance.
High-speed switching.
1.8V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
--20
±
10
--6
--24
1.6
150
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (900mm
2
0.8mm)
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
VGS=
±
8V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--3A
ID=--3A, VGS=--4V
ID=--1.5A, VGS=--2.5V
ID=--0.6A, VGS=--1.8V
--20
V
μ
A
μ
A
V
S
m
m
m
--1
±
10
--1.4
--0.4
5.8
9.6
27
36
58
36
51
88
Static Drain-to-Source On-State Resistance
Marking : YJ
Continued on next page.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
31407PE TI IM TC-00000510
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| CPH6337 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| CPH6337_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| CPH6337-TL-E | 功能描述:MOSFET PCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| CPH6339 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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