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參數(shù)資料
| 型號(hào)： | CPH6351 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultrahigh-Speed Switching Applications |
| 中文描述： | 超高速開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 29K |
| 代理商： | CPH6351 |
CPH6351
No.6936-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
--20
±
10
--3
--12
1.6
150
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (900mm
2
0.8mm)
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=--1mA, VGS=0
VDS=--20V, VGS=0
VGS=
±
8V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1.5A
ID=--1.5A, VGS=--4V
ID=--0.5A, VGS=--2.5V
--20
V
μ
A
μ
A
V
S
m
m
--10
±
10
--1.4
--0.4
3.3
4.8
90
140
Static Drain-to-Source On-State Resistance
120
200
Marking : JE
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6936
CPH6351
Package Dimensions
unit : mm
2151A
[CPH6351]
42501 TS IM TA-2650
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
0.05
0
0
0
1
0
0
0.95
1
2
3
6
5
4
2
0
2.9
0.15
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
Preliminary
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CPH6352 | Ultrahigh-Speed Switching Applications |
| CPH6401 | Ultrahigh-Speed Switching Applications |
| CPH6402 | Ultrahigh-Speed Switching Applications |
| CPH6403 | Load Switching Applications |
| CPH6404 | Ultrahigh-Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CPH6352 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| CPH6354 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| CPH6354_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| CPH6354-TL-H | 功能描述:MOSFET PCH 4V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| CPH6354-TL-W | 功能描述:MOSFET P-CH 60V 4A CPH6 制造商:on semiconductor 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 FET 類型:MOSFET P 通道，金屬氧化物 FET 功能:邏輯電平柵極，4V 驅(qū)動(dòng) 漏源極電壓（Vdss）:60V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:4A（Ta） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:100 毫歐 @ 2A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:2.6V @ 1mA 不同 Vgs 時(shí)的柵極電荷（Qg）:14nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:600pF @ 20V 功率 - 最大值:1.6W 工作溫度:150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:SOT-23-6 細(xì)型，TSOT-23-6 供應(yīng)商器件封裝:6-CPH 標(biāo)準(zhǔn)包裝:3,000 |
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