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      參數(shù)資料
      型號: COP8SGR728Q3XXX
      廠商: NATIONAL SEMICONDUCTOR CORP
      元件分類: 微控制器/微處理器
      英文描述: 8-BIT, UVPROM, MICROCONTROLLER, CDIP28
      封裝: WINDOWED, DIP-28
      文件頁數(shù): 62/62頁
      文件大小: 840K
      代理商: COP8SGR728Q3XXX
      AC Electrical Characteristics (Continued)
      Note 4: Maximum rate of voltage change must be < 0.5 V/ms.
      Note 5: Supply and IDLE currents are measured with CKI driven with a square wave Oscillator, External Oscillator, inputs connected to VCC and outputs driven low
      but not connected to a load.
      Note 6: The HALT mode will stop CKI from oscillating in the R/C and the Crystal configurations. In the R/C configuration, CKI is forced high internally. In the crystal
      or external configuration, CKI is TRI-STATE. Measurement of IDD HALT is done with device neither sourcing nor sinking current; with L. F, C, G0, and G2–G5
      programmed as low outputs and not driving a load; all outputs programmed low and not driving a load; all inputs tied to VCC; clock monitor disabled. Parameter refers
      to HALT mode entered via setting bit 7 of the G Port data register.
      Note 7: Pins G6 and RESET are designed with a high voltage input network. These pins allow input voltages > VCC and the pins will have sink current to VCC when
      biased at voltages > VCC (the pins do not have source current when biased at a voltage below VCC). The effective resistance to VCC is 750 (typical). These two
      pins will not latch up. The voltage at the pins must be limited to < 14V. WARNING: Voltages in excess of 14V will cause damage to the pins. This warning excludes
      ESD transients.
      Note 8: National Semiconductor uses the High Temperature Storage Life (HTSL) test to evaluate the data retention capabilities of the EPROM memory cells used
      in our OTP microcontrollers. Qualification devices have been stressed at 150C for 1000 hours. Under these conditions, our EPROM cells exhibit data retention
      capabilities in excess of 29 years. This is based on an activation energy of 0.7eV derated to 55C.
      Note 9: Parameter characterized but not tested.
      Note 10: Rise times faster than the minimum specification may trigger an internal power-on-reset.
      Note 11: MICROWIRE Setup and Hold Times and Propagation Delays are referenced to the appropriate edge of the MICROWIRE clock. See and the MICROWIRE
      operation description.
      Comparators AC and DC Characteristics
      V
      CC = 5V, 40C ≤ TA ≤ +85C.
      Parameter
      Conditions
      Min
      Typ
      Max
      Units
      Input Offset Voltage (Note 12)
      0.4V
      ≤ V
      IN ≤ VCC
      1.5V
      ±5
      ±15
      mV
      Input Common Mode Voltage Range
      0.4
      V
      CC 1.5
      V
      Voltage Gain
      100
      dB
      Low Level Output Current
      V
      OL = 0.4V
      1.6
      mA
      High Level Output Current
      V
      OH =VCC 0.4V
      1.6
      mA
      DC Supply Current per Comparator
      (When Enabled)
      150
      A
      Response Time (Note 13)
      200 mV step input
      100 mV Overdrive,
      200
      ns
      100 pF Load
      Note 12: The comparator inputs are high impedance port inputs and, as such, input current is limited to port input leakage current.
      Note 13: Response time is measured from a step input to a valid logic level at the comparator output. software response time is dependent of instruction execution.
      DS101317-9
      FIGURE 4. MICROWIRE/PLUS Timing
      COP8SG
      Family
      www.national.com
      9
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      相關(guān)代理商/技術(shù)參數(shù)
      參數(shù)描述
      COP8SGR740N8 功能描述:IC MCU 8BIT CMOS OTP 40DIP RoHS:否 類別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:COP8™ 8SG 其它有關(guān)文件:STM32F101T8 View All Specifications 特色產(chǎn)品:STM32 32-bit Cortex MCUs 標(biāo)準(zhǔn)包裝:490 系列:STM32 F1 核心處理器:ARM? Cortex?-M3 芯體尺寸:32-位 速度:36MHz 連通性:I²C,IrDA,LIN,SPI,UART/USART 外圍設(shè)備:DMA,PDR,POR,PVD,PWM,溫度傳感器,WDT 輸入/輸出數(shù):26 程序存儲器容量:64KB(64K x 8) 程序存儲器類型:閃存 EEPROM 大小:- RAM 容量:10K x 8 電壓 - 電源 (Vcc/Vdd):2 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:A/D 10x12b 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 85°C 封裝/外殼:36-VFQFN,36-VFQFPN 包裝:托盤 配用:497-10030-ND - STARTER KIT FOR STM32497-8853-ND - BOARD DEMO STM32 UNIV USB-UUSCIKSDKSTM32-PL-ND - KIT IAR KICKSTART STM32 CORTEXM3497-8512-ND - KIT STARTER FOR STM32F10XE MCU497-8505-ND - KIT STARTER FOR STM32F10XE MCU497-8304-ND - KIT STM32 MOTOR DRIVER BLDC497-6438-ND - BOARD EVALUTION FOR STM32 512K497-6289-ND - KIT PERFORMANCE STICK FOR STM32MCBSTM32UME-ND - BOARD EVAL MCBSTM32 + ULINK-MEMCBSTM32U-ND - BOARD EVAL MCBSTM32 + ULINK2更多... 其它名稱:497-9032STM32F101T8U6-ND
      COP8SGR740N8/NOPB 制造商:Texas Instruments 功能描述:
      COP8SGR744V8 功能描述:8位微控制器 -MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT
      COP8SGR744V8 制造商:Texas Instruments 功能描述:8BIT MCU OTP 32K 8SGR744 PLCC44
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