參數(shù)資料
型號(hào)： CNA1011K
廠商： PANASONIC CORP
元件分類： 開關(guān)
英文描述： Transmissive Photosensors (Photo lnterrupters)
中文描述： 5 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT
封裝： PISTR104-012, 4 PIN
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 89K
代理商： CNA1011K
Transmissive Photosensors (Photo lnterrupters)
CNA1011K
(ON1113)
Photo lnterrupter
1
Publication date: April 2004
SHG00018BED
For contactless SW, object detection
■
Overview
CNA1011K is a small size photocoupler package consisting of a
high efficiency GaAs infrared light emitting diode used as the light
emitting element, and a high sensitivity phototransistor is used as the
light detecting element.
■
Features
Highly precise position detection: 0.3 mm
Wide gap between emitting and detecting elements, suitable for
thick plate detection
Fast response: t
r
, t
f
=
6
μ
s (typ.)
Small output current variation against change in temperature
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Input (Light
Reverse voltage
V
R
I
F
P
D
V
CEO
3
V
emitting diode) Forward current
Power dissipation
*1
Output (Photo Collector-emitter voltage
transistor)
(Base open)
50
mA
75
30
mW
V
Emitter-collector voltage
(Base open)
V
ECO
5
V
Collector current
Collector power dissipation
*2
I
C
P
C
T
opr
T
stg
20
mA
100
mW
°
C
°
C
Temperature
Operating ambient temperature
25 to
+
85
30 to
+
100
Storage temperature
Parameter
Forward voltage
Symbol
V
F
I
R
C
t
I
CEO
Conditions
Min
Typ
1.2
Max
1.5
Unit
V
μ
A
pF
nA
Input
I
F
=
50 mA
V
R
=
3 V
V
R
=
0 V, f
=
1 MHz
V
CE
=
10 V
characteristics
Reverse current
10
Terminal capacitance
Collector-emitter cutoff current
characteristics
(Base open)
Collector-emitter capacitance
Collector current
35
Output
200
C
C
I
C
V
CE
=
10 V, f
=
1 MHz
V
CC
=
10 V, I
F
=
20 mA, R
L
=
100
I
F
=
50 mA, I
C
=
0.1 mA
V
CC
=
10 V, I
C
=
1 mA
R
L
=
100
5
pF
Transfer
0.3
mA
characteristics
Collector-emitter saturation voltage
V
CE(sat)
Rise time
*
Fall time
*
0.5
V
μ
s
μ
s
t
r
t
f
6
6
■
Electrical-Optical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3.*: Switching time measurement circuit
50
R
L
V
CC
Sig. out
10%
90%
Sig. in
t
t
(Input pulse)
(Output pulse)
t
r
: Rise time
t
f
: Fall time
Note)*1: Input power derating ratio is 1.0 mW/
°
C at
T
a
≥
25
°
C.
*2: Output power derating ratio is 1.34 mW/
°
C
at T
a
≥
25
°
C.
Unit: mm
Mark for indicating
LED side
1.5
7
±
8
8
6
2
±
2
±
13.6
5.0
±0.2
0.45
±0.15
0.4
7.0
±0.2
4- 0.45
(10.1)
(2.54)
A
A'
SEC. A-A'
Device
center
2-
φ
3.2
±0.2
6
2-2.0
2
3
1
4
13.0
±0.15
19.2
1: Anode
2: Cathode
3: Collector
4: Emitter
PISTR104-012 Package
(Note) 1. Tolerance unless otherwise specified is
±
0.3
2. ( ) Dimension is reference
Note) The part number in the parenthesis shows conventional part number.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CNA1011K(ON1113) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Opto-Electronic Device - Photocouplers·Photosensors - Transmissive Photosensors
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CNA1012K(ON1114) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CNA1012K (ON1114) - Photo Interrupter
CNA1014H 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Photo Interrupter
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