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參數(shù)資料
| 型號： | CNA1006N |
| 廠商： | PANASONIC CORP |
| 元件分類： | 開關(guān) |
| 英文描述： | Photo Interrupter |
| 中文描述： | 3 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT |
| 封裝： | PISTR104-023, 4 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 54K |
| 代理商： | CNA1006N |
1
Transmissive Photosensors (Photo Interrupters)
CNA1006N
Photo Interrupter
Pin connection
Unit : mm
Sl1.5
±
0.1
3: Collecter
4: Emitter
1: Anode
2: Cathode
16.6
11.8
3.0
A
Optical
4-0.45
(7.6)
15.0
2-1.5
2-3.3
(2.54)
1.5
+0.2
+0
6
5
2
12.6
±
0.3
2
2-1.0
3
1
4
6
3
±
0
1
(
1
3
0
±
0
2
±
0
2
±
0
SEC A-A'
A'
2
3
1
4
(Note)
1. Tolerance unless otherwise specified is
±
0.2
2. ( ) Dimension is reference
3. Fitting strength is 2N min. (Static load)
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
For contactless SW, object detection
Overview
CNA1006N is a transmissive photosensor in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
Electrical Characteristics
(Ta = 25C)
Parameter
Forward voltage (DC)
characteristics
Reverse current (DC)
Symbol
V
F
I
R
I
CEO
I
C
Conditions
min
typ
1.25
max
1.4
10
200
14
0.4
Unit
V
μ
A
nA
mA
V
μ
s
Input
I
F
= 20mA
V
R
= 3V
V
CE
= 10V
V
CE
= 5V, I
F
= 20mA
Output characteristics
Collector cutoff current
Collector current
Collector to emitter saturation voltage
V
CE(sat)
I
F
= 40mA, I
C
= 1mA
Response time
10
Transfer
characteristics
0.7
t
r
, t
f*
V
CC
= 5V, I
C
= 1mA, R
L
= 100
5
*
Switching time measurement circuit
Features
Highly precise position detection : 0.3 mm
Gap width : 3 mm
The type direetly attached to PCB (with positioning pins and
fixing hooks)
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Symbol
Ratings
V
R
I
F
P
D*1
I
C
V
CEO
V
ECO
P
C*2
T
opr
–25 to +85
T
stg
– 30 to +100
Unit
V
mA
mW
mA
V
V
mW
C
C
Input (Light
emitting diode)
3
50
75
20
30
5
100
Output (Photo
Collector to emitter voltage
transistor)
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature
Temperature
*1
Input power derating ratio is
1.0 mW/C at Ta
≥
25C.
*2
Output power derating ratio is
1.33 mW/C at Ta
≥
25C.
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