參數(shù)資料
型號: CNA1007H
廠商: PANASONIC CORP
元件分類: 開關(guān)
英文描述: Photo Interrupter
中文描述: 5 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT
封裝: PISTR104-024, 4 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 58K
代理商: CNA1007H
1
Transmissive Photosensors (Photo Interrupters)
CNA1007H
Photo Interrupter
(Input pulse)
(Output pulse)
50
R
L
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
r
t
f
For contactless SW, object detection
*1
Input power derating ratio is 1.0 mW/C at Ta = 25C.
*2
Output power derating ratio is 1.33 mW/C at Ta = 25C.
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Symbol
Ratings
V
R
I
F
P
D*1
I
C
V
CEO
V
ECO
P
C*2
T
opr
–25 to +85
T
stg
– 40 to +100
Unit
V
mA
mW
mA
V
V
mW
C
C
Input (Light
emitting diode)
5
50
75
20
30
5
100
Output (Photo
Collector to emitter voltage
transistor)
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature
Temperature
Electrical Characteristics
(Ta = 25C)
Parameter
Forward voltage (DC)
characteristics
Reverse current (DC)
Symbol
V
F
I
R
I
CEO
I
C
Conditions
min
typ
1.25
max
1.4
10
200
14
0.4
Unit
V
μ
A
nA
mA
V
μ
s
Input
I
F
= 20mA
V
R
= 3V
V
CE
= 10V
V
CE
= 5V, I
F
= 20mA
Output characteristics
Collector cutoff current
Collector current
Transfer
characteristics
0.5
Collector to emitter saturation voltage
V
CE(sat)
I
F
= 40mA, I
C
= 1mA
Response time
t
r
, t
f*
V
CC
= 5V, I
C
= 1mA, R
L
= 100
5
*
Switching time measurement circuit
Unit : mm
SEC. A-A'
(C1)
(2.54)
0
±
0
(4-0.45)
1
5.0
6.0
1.5
±
0.15
2
3
1
4
A
A'
14.0
5.0
±
0.15
(10.0)
1.8
φ
1.2
(4-0.45)
(
2
1
3
±
0
Device
Center
1
–0.1
+0
Pin connection
2
3
1
4
Internal connector
Overview
CNA1007H is a transmissive photosensor in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
Features
Position detection accuracy : 0.3 mm
Gap width : 5 mm
Horizontal slit type
The type directly attached to PCB ( with a positioning pins)
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