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參數(shù)資料
| 型號(hào)： | CMT07N60 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | POWER FIELD EFFECT TRANSISTOR |
| 中文描述： | 功率場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 221K |
| 代理商： | CMT07N60 |
CMT07N60
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
2003/06/19
Preliminary
Rev. 1.0
Champion Microelectronic Corporation
Page 2
ORDERING INFORMATION
Part Number
CMT07N60
CMT07N60FP
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25
℃
.
Package
TO-220
TO-220 Full Pak
CMT07N60
Typ
Characteristic
Symbol
V
(BR)DSS
Min
600
Max
Units
V
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μ
A)
Drain-Source Leakage Current
(V
DS
= 600 V, V
GS
= 0 V)
(V
DS
= 480 V, V
GS
= 0 V, T
J
= 125
℃
)
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= 20 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μ
A)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 3.5A) *
Forward Transconductance (V
DS
= 40 V, I
D
= 3.5A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
I
DSS
100
100
100
μ
A
I
GSSF
nA
I
GSSR
100
nA
V
GS(th)
2.0
4.0
V
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
1.2
1800
150
30
70
170
260
180
50
4.0
mhos
pF
pF
pF
1380
115
23
30
80
125
85
38
6.4
15
4.5
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
ns
ns
ns
ns
(V
DD
= 300 V, I
D
= 7.0 A,
V
GS
= 10 V,
R
G
= 9.1
) *
nC
nC
nC
(V
DS
= 480 V, I
D
= 7.0 A,
V
GS
= 10 V)*
nH
L
S
7.5
nH
V
SD
t
on
t
rr
1.4
V
ns
ns
**
415
(I
S
=7.0 A,
d
IS
/d
t
= 100A/μs)
* Pulse Test: Pulse Width
≦
300μs, Duty Cycle
≦
2%
** Negligible, Dominated by circuit inductance
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