參數(shù)資料
型號: CMT07N60
廠商: Electronic Theatre Controls, Inc.
英文描述: POWER FIELD EFFECT TRANSISTOR
中文描述: 功率場效應(yīng)晶體管
文件頁數(shù): 1/7頁
文件大?。?/td> 221K
代理商: CMT07N60
CMT07N60
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
2003/06/19
Preliminary
Rev. 1.0
Champion Microelectronic Corporation
Page 1
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
TO-220/TO-220FP
Front View
FEATURES
!
Robust High Voltage Termination
!
Avalanche Energy Specified
!
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
!
Diode is Characterized for Use in Bridge Circuits
!
I
DSS
Specified at Elevated Temperature
SYMBOL
1
2
3
G
D
S
D
S
G
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
I
D
I
DM
V
GS
V
GSM
P
D
Value
7.0
20
±20
±40
147
50
-55 to 150
245
1.0
62.5
260
Unit
A
V
V
W
Drain to Current
Continuous
Pulsed
Gate-to-Source Voltage
Continue
Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
T
J
= 25
(V
DD
= 100V, V
GS
= 10V, I
L
= 7A, L = 10mH, R
G
= 25
)
Thermal Resistance
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
(1) VDD = 50V, ID = 10A
(2) Pulse Width and frequency is limited by TJ(max) and thermal response
T
J
, T
STG
E
AS
θ
JC
θ
JA
T
L
mJ
/W
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