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參數(shù)資料
| 型號： | CMC02 |
| 廠商： | Toshiba Corporation |
| 英文描述： | For Strobe Discharge Circuit |
| 中文描述： | 對于頻閃放電電路 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 263K |
| 代理商： | CMC02 |
CMC02
2006-11-06
1
TOSHIBA RECTIFIER SILICON DIFFUSED TYPE
CMC02
For Strobe Discharge Circuit
Repetitive peak reverse voltage: V
RRM
= 400 V
Average forward current: I
F (AV)
= 1.0 A
Low forward voltage: V
FM
= 1.0 V (max.)
Repetitive peak forward current: I
FRM
= 150 A (Note 2)
Small surface-mount
package, the “M
FLAT
TM
” (Toshiba package name)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
I
F (AV)
400
V
Average forward current
1.0 (Note 1)
A
Peak one-cycle surge forward current
(non-repetitive)
I
FSM
30 (50 Hz)
A
Repetitive peak forward current
(Note 2)
I
FRM
150
A
Junction temperature
T
j
T
stg
40~150
40~150
°C
Storage temperature range
°C
Note 1: Ta
＝
92°C
Device mounted on a ceramic board
Board size: 50 mm
×
50 mm
Soldering land: 2 mm
×
2 mm
Board thickness: 0.64t
Note 3: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Peak forward voltage
V
FM (1)
I
RRM
I
FM
=
1.0 A (pulse test)
V
RRM
=
400 V (pulse test)
Device mounted on a ceramic board
(board size: 50 mm
×
50 mm)
(soldering land: 2 mm
×
2 mm)
(board thickness: 0.64 t)
0.88
1.0
V
Peak repetitive reverse current
10
μ
A
60
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 6 mm
×
6 mm)
(board thickness: 1.6 t)
110
Thermal resistance
(junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 2.1 mm
×
1.4 mm)
(board thickness: 1.6 t)
180
°C/W
Thermal resistance
(junction to lead)
R
th (j-
)
16
°C/W
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
3-4E1A
Weight: 0.023 g (typ.)
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