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參數(shù)資料
| 型號： | CMBT5551 |
| 廠商： | Continental Device India Limited |
| 英文描述： | SILICON NPN HIGH-VOLTAGE TRANSISTOR |
| 中文描述： | 硅npn型高壓晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 66K |
| 代理商： | CMBT5551 |
Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current
Total power dissipation up to T
amb
= 25 °C
Junction temperature
Storage temperature range
I
C
P
tot
T
j
T
stg
max.
max
max.
600 mA
250
mW
150 ° C
–55 to +150 ° C
THERMAL RESISTANCE
from junction to ambient
R
th j–a
500
K/W
CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
Collector cut–off current
I
E
= 0; V
CB
= 120 V
I
E
= 0; V
CB
= 120 V; T
amb
= 100 °C
Emitter cut–off current
I
C
= 0; V
EB
= 4 V
Breakdown voltages
I
C
= 1 mA; I
B
= 0
I
C
= 100
μ
A; I
E
= 0
I
C
= 0; I
E
= 10
μ
A
Saturation voltages
I
C
= 10 mA; I
B
= 1 mA
I
CBO
I
CBO
max.
max.
50 nA
50
μ
A
I
EBO
max.
50 nA
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
min.
min.
min.
160 V
180 V
6 V
V
CEsat
V
BEsat
V
CEsat
V
BEsat
max.
max.
max.
max.
0.15 V
1 V
0.2 V
1 V
I
C
= 50 mA; I
B
= 5 mA
D.C. current gain
I
C
= 1 mA; V
CE
= 5 V
h
FE
min.
min.
max.
min.
80
80
250
30
I
C
= 10 mA; V
CE
= 5 V
h
FE
I
C
= 50 mA; V
CE
= 5 V
Small–signal current gain
I
C
= 1 mA; V
CE
= 10 V; f = 1 kHz
h
FE
min.
max.
50
200
h
fe
Output capacitance at f = 1 MHz
I
E
= 0; V
CB
= 10 V
Input capacitance at f = 1 MHz
I
C
= 0; V
EB
= 0.5 V
Transition frequency at f = 100 MHz
I
C
= 10 mA; V
CE
= 10 V
C
o
max.
6 pF
C
i
max.
30 pF
min.
max.
100
MHz
300
MHz
f
T
CMBT5551
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CMBT5551-T | 功能描述:兩極晶體管 - BJT NPN 0.6A 160V HV RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBT5551T/-W | 功能描述:兩極晶體管 - BJT NPN 0.6A 160V HV RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBT6517 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:HIGH-VOLTAGE TRANSISTOR |
| CMBT6520 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:HIGH?VOLTAGE TRANSISTOR |
| CMBT8050 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
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