參數(shù)資料
型號(hào): CMBT5551
廠商: Continental Device India Limited
英文描述: SILICON NPN HIGH-VOLTAGE TRANSISTOR
中文描述: 硅npn型高壓晶體管
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 66K
代理商: CMBT5551
Continental Device India Limited
Data Sheet
Page 1 of 3
SILICON N–P–N HIGH–VOLTAGE TRANSISTOR
N–P–N transistor
Marking
CMBT5551 = G
1
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Collector current
Total power dissipation up to T
amb
= 25 °C
Junction temperature
Collector–emitter saturation voltage
I
C
= 50 mA; I
B
= 5 mA
D.C. current gain
I
C
= 10 mA; V
CE
= 5 V
V
CBO
V
CEO
I
C
P
tot
T
j
max.
max.
max.
max
max.
180 V
160 V
600 mA
250
mW
150 ° C
V
CEsat
max.
0.2 V
h
FE
min.
80
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
V
CBO
V
CEO
V
EBO
max.
max.
max.
180 V
160 V
6 V
CMBT5551
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
2
1
SOT-23 Formed SMD Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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