參數(shù)資料
型號: CMBT9012
廠商: Continental Device India Limited
英文描述: PNP SILICON PLANAR TRANSISTOR
中文描述: 進(jìn)步黨硅平面晶體管
文件頁數(shù): 1/3頁
文件大?。?/td> 172K
代理商: CMBT9012
PNP SILICON PLANAR TRANSISTOR
CMBT 9012
SOT-23
MARKING: AS BELOW
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj, Tstg
VALUE
35
30
5.0
500
250
-55 to +150
UNIT
V
V
V
mA
mW
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
SYMBOL TEST CONDITION
VCBO
IC=100uA, IE=0
VCEO
IC=1mA, IB=0
VEBO
IE=100uA, IC=0
ICBO
VCB=25V, IE=0
IEBO
VEB=3V, IC=0
hFE
IC=50mA,VCE=1V *
IC=300mA,VCE=1V
VCE(Sat) IC=150mA,IB=15mA
IC=300mA,IB=30mA
VBE(Sat) IC=150mA,IB=15mA
IC=300mA,IB=30mA
MIN
35
30
5.0
-
-
118
40
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
100
500
305
-
0.20
0.60
1.0
1.20
UNIT
V
V
V
nA
nA
Collector Emitter Saturation Voltage
V
V
V
V
Base Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
ft VCE=10V,IC=50mA,
f=100MHz
140
-
-
MHz
CLASSIFICATION
hFE*
MARKING
G/H/I
118-305
2GI
PIN CONFIGURATION (PNP)
1 = BASE
2 = EMITTER
3 = COLLECTOR
2
1
3
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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CMBT9012G 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:PNP SILICON PLANAR TRANSISTOR
CMBT9012H 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:PNP SILICON PLANAR TRANSISTOR
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CMBT9013G 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 500MA I(C) | SOT-23