參數(shù)資料
型號(hào)： CLP200M
廠商： 意法半導(dǎo)體
英文描述： OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE
中文描述： 過壓和過流保護(hù)的電信線路保護(hù)
文件頁數(shù)： 9/21頁
文件大?。?/td> 232K
代理商： CLP200M
TEST ACCEPTANCE
CRITERIA
NUMBER TO TESTS
2
A
10 forlongitudinalA
10 forlongitudinalB
and 10 fortransversal
3a
A
5
3b
B
1
3
B
1 foreach positionof s
Table1 :
Acceptancecriteriaand numberof tests.
Fig.13 :
Lightningsimulationtest.
10/700
μ
s
GENERATOR
+/- 4kV
4
I
V
Rsense
Rp
TIPL
TIPS
GND
1/2 CLP200M
Fig.14 :
CLP200Mresponseto apositivesurge.
Fig.15 :
CLP200Mresponseto a negativesurge.
Fig. 16 :
Powerinductancetest
.
TEST
V
(RMS)
R(
)
Duration
3a
300
600
0.2s
3b
300
200
3.2.Ringingmode
3.2.1. Lightning simulationtest
Lightningphenomenaare themostcommonsurge
causes.The purposeof thistest is to checkthe ro-
bustnessof the CLP200M against these lightning
strikes.
Figures 14 and 15 show that the remaining over-
voltagedoesnot exceed+/- 260V. The CLP200M
switcheson within0.7
μ
s andwithstandsthe 100A
givenby the CCITTK20 generator.
Consequently,the CLP200Mtotallyfulfillsthistest.
3.2.2Power induction
(Test 3a and 3b table2/K20)
Surgesof longdurationwithmedium voltagevalue
are mainly produced by the proximity of a sub-
scriber line with an AC mains line or equipment.
Thepurposeof thistestisto checkthe robustness
of the CLP200Magainstthese capacitivecoupling
disturbances.
CLP200M
9/21
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