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參數資料
| 型號： | CGY181 |
| 廠商： | SIEMENS A G |
| 元件分類： | 衰減器 |
| 英文描述： | GaAs MMIC (Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier) |
| 中文描述： | 1750 MHz - 1750 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件頁數： | 3/14頁 |
| 文件大小： | 138K |
| 代理商： | CGY181 |
GaAs MMIC
CGY 181
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 3/14
01.02.96
HL EH PD 21
Electrical characteristics
(TA = 25°C , f=1.75 GHz, ZS=ZL=50 Ohm, VD=3.6V, VG =-4V, VTR pin connected to
ground, unless otherwise specified)
Characteristics
Supply current
Pin= 0 dBm
Negative supply current
(normal operation)
Shut-off current
VTR n.c
Negative supply current
(shut off mode, VTR pin n.c.)
Small signal gain
Pin = -5dBm
Power Gain
VD=3.6V, Pin = 16 dBm
Power Gain
VD=5V, Pin = 16 dBm
Output Power
VD=3.6V, Pin = 16 dBm
Output Power
VD=5V , Pin = 16 dBm
Overall Power Added Efficiency
VD=3.6V, Pin = 16 dBm
Overall Power Added Efficiency
VD=5V, Pin = 16 dBm
Harmonics (Pin =16dBm) 2f0
VD=3.6V (Pout=31.85dBm) 3f0
Harmonics (Pin =16dBm) 2f0
VD=5V (Pout=31.85dBm) 3f0
Input VSWR VD=3.6V
Third order intercept point
f1=1.7500GHz; f2=1.7502GHz; V
D
= 3.6V
Third order intercept point
f1=1.7500GHz; f2=1.7502GHz; V
D
= 5V
Symbol
IDD
min
-
typ
1.2
max
-
Unit
A
IG
-
2
3
mA
ID
-
400
-
μA
IG
-
10
-
μ
A
G
-
20.5
-
dB
G
14.5
15.5
-
dB
G
17.5
18.5
-
dB
P0
30.5
31.5
-
dBm
P0
33.5
34.5
-
dBm
η
-
37
-
%
η
-
35
-
%
-
-
-44.8
-70
-45.1
-75
1.9:1
41
-
-
dBc
dBc
IP3
dBm
IP3
44
dBm
All RF-measurements were done in a pulsed mode with a duty cycle of 10% (ton=0.33ms)!
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