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參數(shù)資料
| 型號(hào)： | CGY181 |
| 廠商： | SIEMENS A G |
| 元件分類： | 衰減器 |
| 英文描述： | GaAs MMIC (Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier) |
| 中文描述： | 1750 MHz - 1750 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件頁數(shù)： | 10/14頁 |
| 文件大小： | 138K |
| 代理商： | CGY181 |
GaAs MMIC
CGY 181
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 10/14
01.02.96
HL EH PD 21
P
out
vs. V
D
( V
G
=-4V,f=1.75GHz, P
in
=16dBm,pulsed with a duty cycle of 10%, ton=0.33ms)
28
29
30
31
32
33
34
35
36
37
2,5
3
3,5
4
4,5
5
5,5
6
V
D
[V]
P
o
Performance of internal bias control circuit @VD=3V
(VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
-VG [V]
I
High current
Medium current
Low current
Performance of internal bias control circuit @VD=5V
(VTR=0V, pulsed with a duty cycle of 10%, ton=0.33ms)
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
-VG [V]
I
High current
Medium current
Low current
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