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參數(shù)資料
| 型號(hào)： | CGY181 |
| 廠商： | SIEMENS A G |
| 元件分類(lèi)： | 衰減器 |
| 英文描述： | GaAs MMIC (Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier) |
| 中文描述： | 1750 MHz - 1750 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件頁(yè)數(shù)： | 14/14頁(yè) |
| 文件大?。?/td> | 138K |
| 代理商： | CGY181 |
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GaAs MMIC
CGY 181
________________________________________________________________________________________________________
Siemens Aktiengesellschaft
pg. 14/14
01.02.96
HL EH PD 21
APPLICATION - HINTS
1. CW - capability of the CGY181
Proving the possibility of CW - operations there must be known the total power dissipation of the
device. This value can be found as a function of temperature in the datasheet (page 12). The
CGY181 has a maximum total power dissipation of Ptot = 5 W.
As an example we take the operating point with a drain voltage VD = 3.6 V and a typical drain
current of ID=1.2A. So the maximum DC - power can be calculated to:
P
V
I
DC
D
=
This value is smaller than 5W and CW - operation is possible.
W
D
=
4 32
.
.
By decoupling RF power out of the CGY181 the power dissipation of the device can be further
reduced. Assuming a power added efficiency PAE of 35 % the total power dissipation Ptot can be
calculated using the following formula:
P
P
PAE
tot
DC
W
W
=
=
=
(
)
.
(
.
)
.
1
4 32
1 0 35
2 808
2. Operation without using the internal current control
If you don' t want to use the internal current control, it is recommended to connect the negative
gate voltage at pin 2 (VTR) instead of pin 1 (VG). In that case VG is not connected.
3. Biasing and use considerations
Biasing should be timed in such a way the that gate voltage (VG) is always applied before the drain
voltages (VD), and when returning to the standby mode, the drain voltages have be removed before
the gate voltage.
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