參數(shù)資料
型號(hào): C67076-A2300-A70
廠商: SIEMENS AG
元件分類: 圓形連接器
英文描述: Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT08; Number of Contacts:19; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Right Angle Plug
中文描述: IGBT功率模塊(低損耗IGBT的低電感halfbridge包括快速續(xù)流二極管)
文件頁數(shù): 1/9頁
文件大?。?/td> 128K
代理商: C67076-A2300-A70
Semiconductor Group
1
Feb-14-1997
BSM 200 GB 120 DL
IGBT Power Module
Preliminary data
Low Loss IGBT
Low inductance halfbridge
Including fast free- wheeling diodes
Package with insulated metal base plate
Type
BSM 200 GB 120 DL
V
CE
1200V 340A
I
C
Package
HALF-BRIDGE 2
Ordering Code
C67076-A2300-A70
Maximum Ratings
Parameter
Collector-emitter voltage
Symbol
V
CE
V
CGR
Values
1200
Unit
V
Collector-gate voltage
R
GE
= 20 k
Gate-emitter voltage
1200
± 20
V
GE
I
C
DC collector current
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
200
340
A
I
Cpuls
400
680
P
tot
1400
W
T
j
T
stg
+ 150
°C
-40 ... + 125
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t= 1min.
R
thJC
R
thJC
D
V
is
-
-
-
0.09
0.18
2500
K/W
Vac
Creepage distance
Clearance
DIN humidity category, DIN 40 040
20
11
F
mm
sec
IEC climatic category, DIN IEC 68-1
-
40 / 125 / 56
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