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參數(shù)資料
| 型號： | BZX55C |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon Epitaxial Planar Z-Diode(功率損耗500mW的硅外延平面型齊納二極管) |
| 中文描述： | 硅外延平面穩(wěn)壓二極管（500mW的功率損耗的硅外延平面型齊納二極管） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 70K |
| 代理商： | BZX55C |
BZX55C...
Vishay Telefunken
Rev. 4, 01-Apr-99
3 (6)
www.vishay.de
FaxBack +1-408-970-5600
Document Number 85605
Characteristics
(T
j
= 25 C unless otherwise specified)
95 9611
0
5
10
15
0
100
200
300
400
500
20
R
t
l – Lead Length ( mm )
l
l
T
L
=constant
Figure 1. Thermal Resistance vs. Lead Length
0
40
80
120
160
0
100
300
400
500
600
P
t
T
amb
– Ambient Temperature (
°
C )
200
95 9602
200
Figure 2. Total Power Dissipation vs.
Ambient Temperature
0
5
10
15
20
1
10
100
1000
V
Z
V
Z
– Z-Voltage ( V )
25
95 9598
I
Z
=5mA
T
j
=25
°
C
Figure 3. Typical Change of Working Voltage
under Operating Conditions at T
amb
=25 C
–60
0
T
j
– Junction Temperature (
°
C )
60
120
180
0.8
0.9
1.0
1.1
1.2
1.3
V
Z
240
95 9599
V
Ztn
=V
Zt
/V
Z
(25
°
C)
TK
VZ
=10
10
–4
/K
8
6
10
–4
/K
10
–4
/K
–4
10
–4
/K
4
2
10
–4
/K
10
–4
/K
–2
10
–4
/K
0
Figure 4. Typical Change of Working Voltage vs.
Junction Temperature
0
10
20
30
–5
0
5
10
15
T
V
V
Z
– Z-Voltage ( V )
50
95 9600
40
Z
–
I
Z
=5mA
Figure 5. Temperature Coefficient of Vz vs. Z–Voltage
0
5
10
15
0
50
100
150
200
C
D
V
Z
– Z-Voltage ( V )
25
95 9601
20
T
j
=25
°
C
V
R
=2V
Figure 6. Diode Capacitance vs. Z–Voltage
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相關代理商/技術參數(shù) |
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|---|---|
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