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參數(shù)資料
| 型號： | BZX79 |
| 廠商： | GE Security, Inc. |
| 英文描述： | Silicon Planar Zener Diodes(硅平面齊納二極管) |
| 中文描述： | 硅平面齊納二極管（硅平面齊納二極管） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 321K |
| 代理商： | BZX79 |
SYMBOL
VALUE
UNIT
Zener Current (see Table “Characteristics”)
Power Dissipation at T
amb
= 25°C
P
tot
500
(1)
mW
Junction Temperature
T
j
-65 to 200
°C
Storage Temperature Range
T
S
-65 to + 200
°C
Continuous Forward Current
I
F
250
mA
Peak reverse power dissipation (non-repetitive) t
p
=100ms,
square wave
P
ZSM
40
Watts
BZX79 SERIES
SILICON PLANAR ZENER DIODES
FEATURES
The Zener voltages are graded according to the international
E 24 standard. Higher Zener voltages and 1% tolerance
available on request.
Diodes available in these tolerance series:
±2% BZX79-B
±3% BZX79-F
±5% BZX79-C
MECHANICAL DATA
Case:
DO-35 Glass Case
Weight:
approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature 8unless otherwise specified
12/10/98
m
m
m
max.
Cathode
Mark
.020 (0.52)
max.
.079 (2.0)
Dimensions in inches and (millimeters)
DO-35
Characteristics at Tamb = 25°C
SYMBOL
MIN.
TYP
MAX.
UNIT
Thermal Resistance
Junction to Ambient Air
R
thJA
–
–
0.3
(1)
°C/W
Forward Voltage
at I
F
= 10 mA
V
F
–
–
0.9
Volts
NOTES:
(1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
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