參數(shù)資料
型號(hào): BYQ30EXSERIES
廠商: NXP Semiconductors N.V.
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: Ultra low drop voltage regulators with inhibit low ESR output capacitors compatible
中文描述: 整流二極管超快。崎嶇
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 48K
代理商: BYQ30EXSERIES
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30EX series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance junction to
heatsink
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.0
7.0
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage
CONDITIONS
I
F
= 8 A; T
j
= 150C
I
F
= 16 A; T
j
= 150C
I
F
= 16 A;
V
R
= V
RWM
; T
j
= 100 C
V
= V
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
μ
s
I
= 1 A; V
30 V;
-dI
/dt = 100 A/
μ
s
I
= 1 A; V
30 V;
-dI
/dt = 50 A/
μ
s; T
= 100 C
I
F
= 1 A; dI
F
/dt = 10 A/
μ
s
MIN.
-
-
-
-
-
-
-
TYP.
0.83
1.0
0.98
0.3
2
4
20
MAX.
0.95
1.15
1.25
0.6
30
11
25
UNIT
V
V
I
R
Reverse current
mA
μ
A
nC
ns
Q
s
t
rr
Reverse recovery charge
Reverse recovery time
I
rrm
Peak reverse recovery current
-
1.0
2
A
V
fr
Forward recovery voltage
-
1
-
V
October 1998
2
Rev 1.200
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