參數(shù)資料
型號(hào): BYQ40EWSERIES
廠商: NXP Semiconductors N.V.
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: Ultra low drop voltage regulators with inhibit low ESR output capacitors compatible
中文描述: 整流二極管超快。崎嶇
文件頁數(shù): 1/6頁
文件大?。?/td> 55K
代理商: BYQ40EWSERIES
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ40EW series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Soft recovery characteristic
Reverse surge capability
High thermal cycling performance
Low thermal resistance
V
R
= 150 V/ 200 V
V
F
0.85 V
I
O(AV)
= 40 A
I
RRM
0.2 A
t
rr
30 ns
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
PIN
DESCRIPTION
1
anode 1
2
cathode
TheBYQ40EWseriesissuppliedin
the conventional leaded SOT429
(TO247) package.
3
anode 2
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYQ40EW
-150
150
150
150
-200
200
200
200
V
RRM
V
RWM
V
R
I
O(AV)
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current square wave
(both diodes conducting)
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current per diode
-
-
-
-
V
V
V
A
40
δ
= 0.5; T
mb
110 C
I
FRM
-
40
A
T
110 C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
I
FSM
-
-
300
325
A
A
I
RRM
Repetitive peak reverse current t
p
= 2
μ
s;
δ
= 0.001
per diode
Non-repetitive peak reverse
current per diode
Storage temperature
Operating junction temperature
-
0.2
A
I
RSM
t
p
= 100
μ
s
-
0.2
A
T
stg
T
j
-40
-
150
150
C
C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 k
-
8
kV
k
a1
1
a2
3
2
2
3
1
December 1998
1
Rev 1.000
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