參數(shù)資料
型號(hào): BYQ30EX-150
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes ultrafast, rugged
中文描述: 8 A, 150 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC PACKAGE-3
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 48K
代理商: BYQ30EX-150
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30EX series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Soft recovery characteristic
Reverse surge capability
High thermal cycling performance
Isolated mounting tab
V
R
= 150 V/ 200 V
V
F
0.95 V
I
O(AV)
= 16 A
I
RRM
0.2 A
t
rr
25 ns
GENERAL DESCRIPTION
PINNING
SOT186A
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
PIN
DESCRIPTION
1
anode 1
2
cathode
The BYQ30EX series is supplied in
the conventional leaded SOT186A
package.
3
anode 2
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYQ30EX
-150
150
150
150
-200
200
200
200
V
RRM
V
RWM
V
R
I
O(AV)
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current square wave
(both diodes conducting)
1
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current per diode
-
-
-
-
V
V
V
A
16
δ
= 0.5; T
hs
59 C
I
FRM
-
16
A
T
59 C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
I
FSM
-
-
100
110
A
A
I
RRM
Repetitive peak reverse current t
p
= 2
μ
s;
δ
= 0.001
per diode
Non-repetitive peak reverse
current per diode
Storage temperature
Operating junction temperature
ESD LIMITING VALUE
-
0.2
A
I
RSM
t
p
= 100
μ
s
-
0.2
A
T
stg
T
j
-40
-
150
150
C
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 k
-
8
kV
k
a1
1
a2
3
2
1 2 3
case
1
Neglecting switching and reverse current losses.
October 1998
1
Rev 1.200
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