參數(shù)資料
型號: BYQ30EB-100
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Rectifier diodes ultrafast, rugged
中文描述: 16 A, 100 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 2/6頁
文件大?。?/td> 48K
代理商: BYQ30EB-100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30EB series
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 k
-
8
kV
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-mb
Thermal resistance junction to
mounting base
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes conducting
minimum footprint, FR4 board
MIN.
-
-
-
TYP.
-
-
50
MAX.
3.0
2.5
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage (per diode)
CONDITIONS
I
F
= 8 A; T
j
= 150C
I
F
= 16 A; T
j
= 150C
I
F
= 16 A;
V
R
= V
RWM
; T
j
= 100 C
V
R
= V
RWM
MIN.
-
-
-
-
-
TYP.
0.83
1.0
0.98
0.3
2
MAX.
0.95
1.15
1.25
0.6
30
UNIT
V
V
I
R
Reverse current (per diode)
mA
μ
A
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
Q
s
Reverse recovery charge (per
diode)
t
rr
Reverse recovery time (per
diode)
I
rrm
Peak reverse recovery current
(per diode)
V
fr
Forward recovery voltage (per
diode)
CONDITIONS
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
μ
s
MIN.
-
TYP.
4
MAX.
11
UNIT
nC
I
= 1 A; V
30 V;
-dI
/dt = 100 A/
μ
s
I
= 1 A; V
30 V;
-dI
/dt = 50 A/
μ
s; T
= 100 C
I
F
= 1 A; dI
F
/dt = 10 A/
μ
s
-
20
25
ns
-
1.0
2
A
-
1
-
V
October 1997
2
Rev 1.000
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