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參數(shù)資料
| 型號： | BYQ30ED |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | CABLE FROM SUN WORKSTATION 5 FT |
| 中文描述： | 16 A, 200 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 49K |
| 代理商： | BYQ30ED |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30ED series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass
rugged dual rectifier diodes in a
plastic envelope suitable for surface
mounting,
featuring
voltage
drop,
ultra-fast
times
and
characteristic. These devices can
withstand reverse voltage transients
and have guaranteed reverse surge
and
ESD
capability.
intended for use in switched mode
power supplies and high frequency
circuits
in
general
conduction and switching losses are
essential.
passivated high
efficiency
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
BYQ30ED-
100
100
150
150
200
200
low
forward
recovery
recovery
V
RRM
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
Repetitive peak reverse
current per diode
V
soft
V
F
I
O(AV)
0.95
16
0.95
16
0.95
16
V
A
t
rr
I
RRM
25
0.2
25
0.2
25
0.2
ns
A
They
are
where
low
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
no connection
2
cathode
3
anode
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
-150
150
150
150
16
UNIT
-100
100
100
100
-200
200
200
200
V
RRM
V
RWM
V
R
I
O(AV)
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Output current (both diodes
conducting)
1
RMS forward current
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current per diode
-
-
-
-
V
V
V
A
square wave
δ
= 0.5; T
mb
≤
104 C
I
O(RMS)
I
FRM
-
-
23
16
A
A
T
≤
104 C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
t = 10 ms
I
FSM
-
-
100
110
A
A
I
2
t
I
RRM
I
2
t for fusing
Repetitive peak reverse current t
p
= 2
μ
s;
δ
= 0.001
per diode
Non-repetitive peak reverse
current per diode
Storage temperature
Operating junction temperature
-
-
50
0.2
A
2
s
A
I
RSM
t
p
= 100
μ
s
-
0.2
A
T
stg
T
j
-40
-
150
150
C
C
1
2
3
tab
k
1
a
2
1
Neglecting switching and reverse current losses.
October 1997
1
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BYQ30ED-100 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes ultrafast, rugged |
| BYQ30ED-150 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes ultrafast, rugged |
| BYQ30ED-200 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes ultrafast, rugged |
| BYQ30EDSERIES | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes ultrafast. rugged |
| BYQ30ESERIES | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes ultrafast. rugged |
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