參數(shù)資料
型號： BYD13M
廠商： NXP SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： Controlled avalanche rectifiers
中文描述： 0.4 A, 1000 V, SILICON, SIGNAL DIODE
封裝： HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù)： 3/7頁
文件大小： 39K
代理商： BYD13M
1996 May 24
3
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD13 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥
40
μ
m, see Fig.9.
For more information please refer to the “General Part of associated Handbook”
I
F(AV)
average forward current
T
tp
= 55
°
C; lead length = 10 mm;
averaged over any 20 ms period;
see Figs 2 and 4
T
amb
= 65
°
C; PCB mounting
(see Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
1.40
A
0.75
A
I
FSM
non-repetitive peak forward current
20
A
E
RSM
non-repetitive peak reverse
avalanche energy
storage temperature
7
mJ
T
stg
T
j
65
65
+175
°
C
°
C
junction temperature
see Fig.5
+175
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max;
see Fig.6
I
F
= 1 A; see Fig.6
I
R
= 0.1 mA
0.93
1.05
V
V
V
(BR)R
reverse avalanche
breakdown voltage
BYD13D
BYD13G
BYD13J
BYD13K
BYD13M
reverse current
225
450
650
900
1100
1
V
V
V
V
V
μ
A
μ
A
μ
s
I
R
V
R
= V
RRMmax
; see Fig.7
V
R
= V
RRMmax
; T
j
= 165
°
C; see Fig.7
100
t
rr
reverse recovery time when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.10
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.8
3
C
d
21
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
60
K/W
K/W
120
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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相關代理商/技術參數(shù)
參數(shù)描述
BYD13M/A52R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DIODE CONTROLLED AVALANCHE
BYD13MGP/51 功能描述:整流器 1.0 Amp 1000 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
BYD13MGP/54 功能描述:整流器 1.0 Amp 1000 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
BYD13MGP/73 功能描述:整流器 1.0 Amp 1000 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
BYD13MGP-E3/51 功能描述:整流器 1.0 Amp 1000 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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