參數(shù)資料
型號: BUZ907D
英文描述: P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路))
中文描述: P溝道功率MOSFET為音頻應(yīng)用性(P溝道功率型馬鞍山場效應(yīng)管(用于音頻電路))
文件頁數(shù): 2/2頁
文件大?。?/td> 25K
代理商: BUZ907D
V
V
V
V
V
mA
mA
S
-220
-250
±14
-0.10
-1.5
-12
0.75
-10
-10
0.7
4
V
GS
= 10V
I
D
= -10mA
V
DS
= 0
V
DS
= -10V
V
GD
= 0
V
GS
= -10
BUZ907D
BUZ908D
I
G
= ±100
μ
A
I
D
= -100mA
I
D
= -16A
I
D
= -16A
V
DS
= -220V
BUZ907D
V
DS
= -250V
BUZ908D
I
D
= -3A
V
GS
= 10V
V
DS
= -10V
BV
DSX
Drain – Source Breakdown Voltage
BV
GSS
V
GS(OFF)
V
DS(SAT)
*
R
DS(on)
*
Gate – Source Breakdown Voltage
Gate – Source Cut–Off Voltage
Drain – Source Saturation Voltage
Static – Source Resistance
I
DSX
Drain – Source Cut–Off Current
yfs*
Forward Transfer Admittance
MAGNA
Magnatec.
Telephone (01455) 554711. Fax (01455) 552612.
Prelim. 01/97
BUZ907D
BUZ908D
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
* Pulse Test: Pulse Width = 300
μ
s , Duty Cycle
2%.
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–on Time
Turn-off Time
Test Conditions
Min.
Typ.
TBA
TBA
TBA
TBA
TBA
Max.
Unit
C
iss
C
oss
C
rss
t
on
t
off
V
DS
= -10V
f = 1MHz
V
DS
= -20V
I
D
= -5A
pF
ns
STATIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
D
G
S
DYNAMIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
相關(guān)PDF資料
PDF描述
BUZ908D P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路))
BUZ907P P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路))
BUZ908P P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路))
BUZ907 P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路))
BUZ908 P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路))
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