參數(shù)資料
型號: BUZ907P
英文描述: P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應管(用于音頻電路))
中文描述: P溝道功率MOSFET為音頻應用性(P溝道功率型馬鞍山場效應管(用于音頻電路))
文件頁數(shù): 1/2頁
文件大?。?/td> 24K
代理商: BUZ907P
MAGNA
Magnatec.
Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97
BUZ907P
BUZ908P
V
DSX
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θ
JC
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
±14V
-8A
-8A
125W
–55 to 150°C
150°C
1°C/W
MECHANICAL DATA
Dimensions in mm
1
3
2
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
2
2
6
(
B
1
2
4
(
M
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
BSC
2.87 (0.113)
3.12 (0.123)
P–CHANNEL
POWER MOSFET
FEATURES
HIGH SPEED SWITCHING
SEMEFAB DESIGNED AND DIFFUSED
HIGH VOLTAGE (220V & 250V)
HIGH ENERGY RATING
ENHANCEMENT MODE
INTEGRAL PROTECTION DIODES
COMPLIMENTARY N–CHANNEL
BUZ902P & BUZ903P
Pin 1 – Gate
TO-247
Pin 2 – Source
Case– Source
Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ907P
-220V
BUZ908P
-250V
相關(guān)PDF資料
PDF描述
BUZ908P P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應管(用于音頻電路))
BUZ907 P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應管(用于音頻電路))
BUZ908 P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應管(用于音頻電路))
BUZ94 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7.8A I(D) | TO-204AA
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