參數(shù)資料
型號(hào): BUZ907
英文描述: P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
中文描述: P溝道功率MOSFET為音頻應(yīng)用性(P溝道功率型馬鞍山場(chǎng)效應(yīng)管(用于音頻電路))
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 25K
代理商: BUZ907
MAGNA
Magnatec.
Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97
BUZ907
BUZ908
V
DSX
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θ
JC
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
±14V
-8A
-8A
125W
–55 to 150°C
150°C
1°C/W
MECHANICAL DATA
Dimensions in mm
3
3
1
R 4.0 ± 0.1
R 4.4 ± 0.2
1.50
Typ.
11.60
± 0.3
8.7 Max.
10.90 ± 0.1
+0.1
-0.15
25.0
1
2
P–CHANNEL
POWER MOSFET
FEATURES
HIGH SPEED SWITCHING
SEMEFAB DESIGNED AND DIFFUSED
HIGH VOLTAGE (220V & 250V)
HIGH ENERGY RATING
ENHANCEMENT MODE
INTEGRAL PROTECTION DIODES
COMPLIMENTARY N–CHANNEL
BUZ902 & BUZ903
Pin 1 – Gate
TO–3
Pin 2 – Drain
Case – Source
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ907
-220V
BUZ908
-250V
相關(guān)PDF資料
PDF描述
BUZ908 P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場(chǎng)效應(yīng)管(用于音頻電路))
BUZ94 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7.8A I(D) | TO-204AA
BV5 DMOS dual full bridge driver
BV1 DMOS dual full bridge driver
BV2 DMOS dual full bridge driver
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