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參數(shù)資料
| 型號： | BUZ906D |
| 英文描述： | PUSH-PULL FOUR CHANNEL DRIVER WITH DIODES |
| 中文描述： | 晶體管音頻MOSFET的因子LEISTUNGS |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 39K |
| 代理商： | BUZ906D |
MAGNA
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 2/95
BUZ900DP
BUZ901DP
Characteristic
Test Conditions
V
GS
= –10V
I
D
= 10mA
V
DS
= 0
V
DS
= 10V
V
GD
= 0
Min.
160
200
±14
0.1
Typ.
Max.
Unit
BV
DSX
Drain – Source Breakdown Voltage
BV
GSS
V
GS(OFF)
V
DS(SAT)
*
Gate – Source Breakdown Voltage
Gate – Source Cut–Off Voltage
Drain – Source Saturation Voltage
I
DSX
Drain – Source Cut–Off Current
yfs*
Forward Transfer Admittance
1.5
12
10
10
1.4
4
* Pulse Test: Pulse Width = 300
μ
s , Duty Cycle
≤
2%.
BUZ900DP
BUZ901DP
I
G
= ±100
μ
A
I
D
= 100mA
I
D
= 16A
V
DS
= 160V
BUZ900DP
V
DS
= 200V
BUZ901DP
I
D
= 3A
V
GS
= –10V
V
DS
= 10V
V
V
V
V
mA
S
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–on Time
Turn-off Time
Test Conditions
Min.
Typ.
950
550
18
160
80
Max.
Unit
C
iss
C
oss
C
rss
t
on
t
off
V
DS
= 10V
f = 1MHz
V
DS
= 20V
I
D
= 7A
pF
ns
STATIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
50
100
150
200
250
300
0
0
25
50
75
100
125
150
T — CASE TEMPERATURE (C)
C
Derating Chart
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUZ901D | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ900D | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ901X4S | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ900X4S | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ902P | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUZ906D | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 |
| BUZ906DP | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-264 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 200V 16A TO-3PBL |
| BUZ906DP | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-264 |
| BUZ906P | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-247 制造商:TT Electronics/ Semelab 功能描述:MOSFET, P, TO-247 制造商:SEMELAB 功能描述:P CHANNEL MOSFET, -200V, 8A, TO-247; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):1.5ohm; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:125W ;RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 200V 8A TO-247 |
| BUZ906P | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-247 |
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