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參數(shù)資料
| 型號： | BUZ901D |
| 英文描述： | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| 中文描述： | N溝道功率MOSFET為音頻應(yīng)用（不適用馬鞍山溝道功率型場效應(yīng)管（用于音頻電路）） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 40K |
| 代理商： | BUZ901D |
MAGNA
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ900D
BUZ901D
V
DSX
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θ
JC
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
±14V
16A
16A
250W
–55 to 150°C
150°C
0.5°C/W
MECHANICAL DATA
Dimensions in mm
3
3
1
R 4.0 ± 0.1
R 4.4 ± 0.2
1.50
Typ.
11.60
± 0.3
8.7 Max.
10.90 ± 0.1
+0.1
-0.15
25.0
1
2
N–CHANNEL
POWER MOSFET
FEATURES
HIGH SPEED SWITCHING
N–CHANNEL POWER MOSFET
SEMEFAB DESIGNED AND DIFFUSED
HIGH VOLTAGE (160V & 200V)
HIGH ENERGY RATING
ENHANCEMENT MODE
INTEGRAL PROTECTION DIODE
P–CHANNEL ALSO AVAILABLE AS
BUZ905D & BUZ906D
DOUBLE DIE PACKAGE FOR MAXIMUM
POWER AND HEATSINK SPACE
Pin 1 – Gate
TO–3
Pin 2 – Drain
Case – Source
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ900D
160V
BUZ901D
200V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUZ900D | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ901X4S | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ900X4S | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ902P | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ903P | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUZ901D | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-3 |
| BUZ901DP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL POWER MOSFET |
| BUZ901P | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-247 制造商:TT Electronics/ Semelab 功能描述:MOSFET, N, TO-247 制造商:SEMELAB 功能描述:N CHANNEL MOSFET, 200V, 8A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:125W; No. of Pins:3 ;RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:MOSFET N-Channel 200V 8A TO-247 |
| BUZ901P | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-247 |
| BUZ901X4S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NEW PRODUCT UNDER DEVELOPMENT |
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