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參數(shù)資料
| 型號： | BUZ900X4S |
| 英文描述： | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| 中文描述： | N溝道功率MOSFET為音頻應(yīng)用（不適用馬鞍山溝道功率型場效應(yīng)管（用于音頻電路）） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 33K |
| 代理商： | BUZ900X4S |
BUZ900X4S
BUZ901X4S
V
DSX
V
GS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θ
JC
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
BUZ900X4S
160V
BUZ901X4S
200V
±14V
32A
32A
500W
–55 to 150°C
150°C
0.3°C/W
NEW PRODUCT UNDER DEVELOPMENT
MECHANICAL DATA
Dimensions in mm (inches)
1
3
4
2
R
38.0 (1.496)
38.2 (1.504)
30.1 (1.185)
30.3 (1.193)
14.9 (0.587)
15.1 (0.594)
3.3 (0.129)
3.6 (0.143)
7.8 (0.307)
8.2 (0.322)
31.5 (1.240)
31.7 (1.248)
4.0 (0.157)
(2 Places)
R =
4.0 (0.157)
4.2 (0.165)
)
)
4.1 (0.161
4.3 (0.169
4.8 (0.187)
(4 places)
W =
H =
8.9 (0.350)
9.6 (0.378)
11.8 (0.463)
12.2 (0.480)
Hex Nut M4
(4 places)
1
1
2
2
0.75 (0.030)
0.85 (0.033)
5.1 (0.201)
5.9 (0.232)
1.95 (0.077)
2.14 (0.084)
N–CHANNEL
POWER MOSFET
FEATURES
HIGH SPEED SWITCHING
N–CHANNEL POWER MOSFET
SEMEFAB DESIGNED AND DIFFUSED
HIGH VOLTAGE (160V & 200V)
HIGH ENERGY RATING
ENHANCEMENT MODE
INTEGRAL PROTECTION DIODE
P–CHANNEL ALSO AVAILABLE
SOT227
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
Pin 4 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
Prelim. 4/94
MAGNA
Magnatec.
Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612.
POWER MOSFETS FOR
AUDIO APPLICATIONS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUZ902P | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ903P | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ902 | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ903 | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ903DP | N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUZ901 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-3 制造商:TT Electronics/ Semelab 功能描述:MOSFET, N, TO-3 制造商:SEMELAB 功能描述:N CHANNEL MOSFET, 200V, 8A, TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:125W; No. of Pins:2 ;RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:MOSFET N-Channel 200V 8A TO-3 |
| BUZ901 | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-3 |
| BUZ901CDP | 制造商:TT Electronics / Semelab 功能描述:MOSFET N-Channel 200V 16A TO-264 |
| BUZ901D | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-3 制造商:TT Electronics/ Semelab 功能描述:MOSFET, N, TO-3 制造商:SEMELAB 功能描述:N CHANNEL MOSFET, 200V, 16A, TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:200V; On Resistance Rds(on):750mohm; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:250W; No. of Pins:2;RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:MOSFET N-Channel 200V 16A TO-3 |
| BUZ901D | 制造商:TT Electronics/ Semelab 功能描述:MOSFET N TO-3 |
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