參數(shù)資料
型號： BUZ903D
英文描述： N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應管(用于音頻電路))
中文描述： N溝道功率MOSFET為音頻應用（不適用馬鞍山溝道功率型場效應管（用于音頻電路））
文件頁數(shù)： 2/2頁
文件大?。?/td> 25K
代理商： BUZ903D
V
V
V
V
V
mA
mA
S
220
250
±14
0.10
1.5
12
0.75
10
10
1.4
4
BV
DSX
Drain – Source Breakdown Voltage
BV
GSS
V
GS(OFF)
V
DS(SAT)
*
R
DS(on)
*
Gate – Source Breakdown Voltage
Gate – Source Cut–Off Voltage
Drain – Source Saturation Voltage
Static – Source Resistance
I
DSX
Drain – Source Cut–Off Current
yfs*
Forward Transfer Admittance
V
GS
= -10V
I
D
= 10mA
V
DS
= 0
V
DS
= 10V
V
GD
= 0
V
GS
= 10
BUZ902D
BUZ903D
I
G
= ±100
μ
A
I
D
= 100mA
I
D
= 16A
I
D
= 16A
V
DS
= 220V
BUZ902D
V
DS
= 250V
BUZ903D
I
D
= 3A
V
GS
= -10V
V
DS
= 10V
MAGNA
Magnatec.
Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97
BUZ902D
BUZ903D
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
* Pulse Test: Pulse Width = 300
μ
s , Duty Cycle
≤
2%.
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–on Time
Turn-off Time
Test Conditions
Min.
Typ.
TBA
TBA
TBA
TBA
TBA
Max.
Unit
C
iss
C
oss
C
rss
t
on
t
off
V
DS
= 10V
f = 1MHz
V
DS
= 20V
I
D
= 7A
pF
ns
STATIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
D
G
S
DYNAMIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
相關PDF資料
PDF描述
BUZ902D N-Channel Power MOSFET For Audio Application(N溝道功率型MOS場效應管(用于音頻電路))
BUZ905DP P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應管(用于音頻電路))
BUZ906DP P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應管(用于音頻電路))
BUZ905D P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應管(用于音頻電路))
BUZ906D P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應管(用于音頻電路))
相關代理商/技術參數(shù)
參數(shù)描述
BUZ903P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N CHANNEL POWER MOSFET
BUZ905 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 制造商:TT Electronics/ Semelab 功能描述:MOSFET, P, TO-3 制造商:Semelab 功能描述:TO3 -160V -8A 125W P CHANNEL MOSFET 制造商:SEMELAB 功能描述:P CHANNEL MOSFET, -160V, 8A, TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-160V; On Resistance Rds(on):1.5ohm; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:125W; No. of Pins:2;RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 160V 8A TO-3
BUZ905 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3
BUZ905D 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 制造商:TT Electronics/ Semelab 功能描述:MOSFET, P, TO-3 制造商:SEMELAB 功能描述:MOSFET, P, TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:160V; On Resistance Rds(on):750mohm; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:250W; No. of Pins:2 ;RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 160V 16A TO-3
BUZ905D 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*