- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369580 > BUZ906D P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) PDF資料下載
參數(shù)資料
| 型號： | BUZ906D |
| 英文描述： | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| 中文描述： | P溝道功率MOSFET為音頻應(yīng)用性（P溝道功率型馬鞍山場效應(yīng)管（用于音頻電路）） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 40K |
| 代理商： | BUZ906D |
MAGNA
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ905D
BUZ906D
V
DSX
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θ
JC
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
±14V
-16A
-16A
250W
–55 to 150°C
150°C
0.5°C/W
MECHANICAL DATA
Dimensions in mm
3
3
1
R 4.0 ± 0.1
R 4.4 ± 0.2
1.50
Typ.
11.60
± 0.3
8.7 Max.
10.90 ± 0.1
+0.1
-0.15
25.0
1
2
P–CHANNEL
POWER MOSFET
FEATURES
HIGH SPEED SWITCHING
P–CHANNEL POWER MOSFET
SEMEFAB DESIGNED AND DIFFUSED
HIGH VOLTAGE (160V & 200V)
HIGH ENERGY RATING
ENHANCEMENT MODE
INTEGRAL PROTECTION DIODE
N–CHANNEL ALSO AVAILABLE AS
BUZ900D & BUZ901D
DOUBLE DIE PACKAGE FOR MAXIMUM
POWER AND HEATSINK SPACE
Pin 1 – Gate
TO–3
Pin 2 – Drain
Case – Source
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ905D
-160V
BUZ906D
-200V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUZ905P | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ906P | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ905X4S | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ906X4S | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
| BUZ905 | P-Channel Power MOSFET For Audio Application(P溝道功率型MOS場效應(yīng)管(用于音頻電路)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUZ906D | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-3 |
| BUZ906DP | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-264 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 200V 16A TO-3PBL |
| BUZ906DP | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-264 |
| BUZ906P | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-247 制造商:TT Electronics/ Semelab 功能描述:MOSFET, P, TO-247 制造商:SEMELAB 功能描述:P CHANNEL MOSFET, -200V, 8A, TO-247; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):1.5ohm; Threshold Voltage Vgs Typ:-1.5V; Power Dissipation Pd:125W ;RoHS Compliant: Yes 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Channel 200V 8A TO-247 |
| BUZ906P | 制造商:TT Electronics/ Semelab 功能描述:MOSFET P TO-247 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。